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Showing results 1 to 2 of 2

Issue DateTitleAuthor(s)
2024-04Boltzmann Switching MoS2 Metal-Semiconductor Field-Effect Transistors Enabled by Monolithic-Oxide-Gapped Metal Gates at the Schottky-Mott LimitKim, Yeon Ho; Jiang, Wei; Lee, Donghun; Moon, Donghoon; Choi, Hyun-Young; Shin, June-Chul; Jeong, Yeonsu; Kim, Jong Chan; Lee, Jaeho; Huh, Woong; Han, Chang Yong; So, Jae-Pil; Kim, Tae Soo; Kim, Seong Been; Koo, Hyun Cheol; Wang, Gunuk; Kang, Kibum; Park, Hong-Gyu; Jeong, Hu Young; Im, Seongil; Lee, Gwan-Hyoung; Low, Tony; Lee, Chul-Ho
2022-05Fermi-Level Pinning-Free WSe2 Transistors via 2D Van der Waals Metal Contacts and Their CircuitsJang, Jisu; Ra, Hyun-Soo; Ahn, Jongtae; Kim, Tae Wook; Song, Seung Ho; Park, Soohyung; Taniguch, Takashi; Watanabe, Kenji; Lee, Kimoon; Hwang, Do Kyung
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