| 2004-01-03 | Dependence of the optical properties on the GaAs spacer thickness for vertically stacked InAs/GaAs quantum dots | Lee, CY; Song, JD; Kim, JM; Chang, KS; Lee, YT; Kim, TW |
| 2005-03 | Detection wavelength tuning of InGaAs/GaAs quantum dot infrared photodetector with thermal treatment | Hwang, SH; Shin, JC; Song, JD; Choi, WJ; Lee, JI; Han, H |
| 2005-02 | Effect of deposition period on structural and optical properties of InGaAs/GaAs quantum dots formed by InAs/GaAs short-period superlattices | Song, JD; Park, YJ; Han, IK; Choi, WJ; Cho, WJ; Lee, JI; Cho, YH; Lee, JY |
| 2005-03-01 | Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots | Lim, JG; Park, YJ; Park, YM; Song, JD; Choi, WJ; Han, IK; Cho, WJ; Lee, JI; Kim, TW; Kim, HS; Park, CG |
| 2003-02 | Effects of the thickness of dielectric capping layer and the distance of quantum wells from the sample surface on the intermixing of In0.2Ga0.8As/GaAs multiple quantum well structures by impurity-free vacancy disordering | Yu, JS; Song, JD; Lee, YT; Lim, H |
| 2003-05 | Effects of thermal annealing on the interband transitions of single and vertically stacked InAs/GaAs self-assembled quantum dots | Lee, CY; Song, JD; Lee, YT; Kim, TW |
| 2005-01 | Electrical and optical characterization of energy states in self-assembled InAs/GaAs quantum dots with size distribution | Hwang, SH; Lee, JI; Song, JD; Choi, WJ; Han, IK; Chang, SK |
| 2004-01-01 | Electrical and optical characterizations of self-assembled quantum dots formed by the atomic layer epitaxy technique | Park, YM; Park, YJ; Kim, KM; Shin, JC; Song, JD; Lee, JI; Yoo, KH |
| 2004-07 | Electrical characterization of InAs/GaAs quantum-dot infrared photodiodes | Park, HK; Kim, EK; Lee, CH; Song, JD; Choi, WJ; Park, YJ; Lee, JI |
| 2004-04-15 | Electrical properties and ultrafast photo-response of InGaAs/InP grown by low-temperature molecular beam epitaxy with a GaAs decomposition source | Kim, JM; Lee, YT; Song, JD; Kim, JH |
| 2005-03 | Electron-hole separation in InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Song, JD; Lee, JI |
| 2005-12 | Electronic subband structure in InAs-GaAs quantum dots in an asymmetric-well infrared photodetector structure | Nam, H; Song, JD; Choi, WJ; Lee, JI; Yang, H; Kwack, HS; Cho, YH |
| 2005-05 | Estimation of built-in dipole moment in InAs quantum dots | Park, YM; Park, YJ; Song, JD; Lee, JI |
| 2005-02 | Fabrication of multi-wavelength In0.2Ga0.8As/GaAs multiple quantum well laser diodes by area-selective impurity-free vacancy disordering using SiOx capping layers with different stoichiometries | Yu, JS; Song, JD; Lee, YT; Lim, H |
| 2003-07 | Fabrication of optical sources using InGaAs quantum dots grown by atomic layer epitaxy | Heo, DC; Han, IK; Song, JD; Choi, WJ; Lee, JI; Lee, JY; Lee, JI; Jeong, JC |
| 2003-02 | Fabrication of wavelength-shifted In0.2Ga0.8As/GaAs multiple quantum well laser diodes by impurity-free vacancy disordering at different thermal annealing temperatures | Yu, JS; Song, JD; Lee, YT; Lim, H |
| 2004-10-01 | Gate controlled hall effect devices | Jung, D; Eom, J; Chang, J; Song, JD; Han, SH |
| 2003-05-29 | High power broadband InGaAs/GaAs quantum dot superluminescent diodes | Heo, DC; Song, JD; Choi, WJ; Lee, JI; Jung, JC; Han, IK |
| 2003-04 | Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In0.53Ga0.47As/In-0.53(Ga0.6Al0.4)(0.47)As quantum well laser structure with InGaAlAs digital alloys by thermal annealing | Yu, JS; Song, JD; Kim, JM; Bae, SJ; Lee, YT; Lim, H |
| 2006-04-01 | InAs/GaAs quantum dot lasers with dots in an asymmetric InxGa1-xAs quantum well structure | Choi, WJ; Song, JD; Lee, JI; Kim, KC; Kim, TG |
| 2004-10-15 | Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy | Song, JD; Park, YM; Shin, JC; Lim, JG; Park, YJ; Choi, WJ; Han, IK; Lee, JI; Kim, HS; Park, CG |
| 2005-08 | Influence of impurity-free vacancy diffusion on the optical and optoelectronic properties of the In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells electroabsorption modulator structure | Yu, JS; Song, JD; Lee, YT; Lim, H |
| 2004-01 | Influence of semiconductor cap layer on the impurity-free vacancy disordering of the In0.2Ga0.8As/GaAs multiquantum-well structure by dielectric capping layers | Yu, JS; Song, JD; Kim, JM; Lee, YT; Lim, H |
| 2004-01 | Initiation and evolution of phase separation in GaP/InP short-period superlattices | Shin, B; Chen, W; Goldman, RS; Song, JD; Kim, JM; Lee, YT |
| 2004-11-15 | Interdiffusion and structural change in an InGaAs dots-in-a-well structure by rapid thermal annealing | Park, YM; Park, YJ; Kim, KM; Song, JD; Lee, JI; Yoo, KH; Kim, HS; Park, CG |
| 2004-07 | Investigation of detection wavelength in quantum dot infrared photodetector | Hwang, SH; Shin, JC; Song, JD; Choi, WJ; Lee, JI; Han, H; Kim, EK |
| 2005-02 | Low-frequency noise characteristics of InGaAs quantum-dot infrared photodetector structures grown by atomic layer molecular-beam epitaxy | Choi, WJ; Song, JD; Hwang, SH; Lee, JI; Kim, JH; Song, JI; Kim, EK; Chovet, A |
| 2004-10-01 | MBE growth and optical properties of digital-alloy 1.55 mu m multi-quantum wells | Song, JD; Choi, WJ; Kim, JM; Chang, KS; Lee, YT |
| 2005 | Optical and electrical characterization of quantum dot infrared photodetector structure treated with hydrogen-plasma | Nam, HD; Song, JD; Choi, WJ; Lee, JI; Yang, HS |
| 2005-11 | Optical and electronic properties in (In0.53Ga0.47As)(1-z)/(In0.52Al0.48As)(z) digital alloys | Woo, JT; Kim, JH; Kim, TW; Song, JD; Park, YJ |
