| 2018-02 | Dependence of Internal Crystal Structures of InAs Nanowires on Electrical Characteristics of Field Effect Transistors | Han, Sangmoon; Choi, Ilgyu; Lee, Kwanjae; Lee, Cheul-Ro; Lee, Seoung-Ki; Hwang, Jeongwoo; Chung, Dong Chul; Kim, Jin Soo |
| 1999-02-01 | Direct electronic transport through an ensemble of InAs self-assembled quantum dots | Jung, SK; Hwang, SW; Choi, BH; Kim, SI; Park, JH; Kim, Y; Kim, EK; Min, SK |
| 1998-12 | Direct transport measurements through an ensemble of INAS self-assembled quantum dots | Jung, SK; Choi, BH; Kim, SI; Hyon, CK; Min, BD; Hwang, SW; Park, JH; Kim, Y; Kim, EK; Min, SK |
| 2013-08-26 | Directional terahertz emission from corrugated InAs structures | Yim, Jong-Hyuk; Jeong, Hoonil; Irfan, Muhammad; Lee, Eun-Hye; Song, Jin-Dong; Jho, Young-Dahl |
| - | Effect of AlSb buffer layer and InAs channel thickness on electrical properties of InAs/AlSb-based 2 DEG HEMT structure | Shin Sang Hoon; Lim Ju-Young; SONG, JIN-DONG; Han, Suk Hee; TG Kim |
| 2009-09 | Effect of Growth Interruption in Migration Enhanced Epitaxy on InAs/GaAs Quantum Dots | Ryu, Sung-Pil; Cho, Nam-Ki; Lim, Ju-Young; Rim, A-Ram; Choi, Won-Jun; Song, Jin-Dong; Lee, Jung-Il; Lee, Yong-Tak |
| 2010-02 | Effect of growth parameters on the formation of three-dimensional InAs islands on (001) silicon substrate | Lim, J. Y.; Song, J. D.; Choi, W. J.; Yang, H. S. |
| 2011-05 | Effect of InAs Thickness on the Structural and the Electrical Properties of InAs Layers Grown on GaAs Substrates with an AlAs0.32Sb0.68 Buffer Layer | Kim, S. Y.; Song, J. D.; Kim, T. W. |
| 2009-09 | Effect of Modified Growth Method on the Structural and Optical Properties of InAs/GaAs Quantum Dots for Controlling Density | Ryu, Sung-Pil; Cho, Nam-Ki; Lim, Ju-Young; Lee, Hye-Jin; Choi, Won-Jun; Song, Jin-Dong; Lee, Jung-Il; Lee, Yong-Tak |
| 2007-09-01 | Effect of rapid thermal annealing on the noise properties of InAs/GaAs quantum dot structures | Arpatzanis, N.; Tsormpatzoglou, A.; Dimitriadis, C. A.; Song, J. D.; Choi, W. J.; Lee, J. I.; Charitidis, C. |
| 2008-11 | Effects of the AlSb Buffer Layer and the InAs Channel Thickness on the Electrical Properties of InAs/AlSb-Based 2-DEG HEMT Structures | Shin, S. H.; Lim, J. Y.; Song, J. D.; Kim, H. J.; Han, S. H.; Kim, T. G. |
| 2008-02 | Effects of the well layer on the emission wavelength of InAs/InGaAs dot-in-a-well structure | Kim, J.; Yang, C. J.; Sim, U.; Yoon, E.; Lee, Y.; Choi, W. J. |
| 2019-02-15 | Effects of thermal and electrical stress on defect generation in InAs metal-oxide-semiconductor capacitor | Baik, Min; Kang, Hang-Kyu; Kang, Yu-Seon; Jeong, Kwang-Sik; Lee, Changmin; Kim, Hyoungsub; Song, Jin-Dong; Cho, Mann-Ho |
| 2005-01 | Electrical and optical characterization of energy states in self-assembled InAs/GaAs quantum dots with size distribution | Hwang, SH; Lee, JI; Song, JD; Choi, WJ; Han, IK; Chang, SK |
| 2004-06 | Electrical characterization of InAs/InP self-assembled quantum dots by deep-level transient spectroscopy | Kim, EK; Kim, JS; Hwang, H; Park, K; Yoon, E; Kim, JH; Park, IW; Park, YJ |
| - | Electrical spin injection and detection into In53Ga47As and InAs quantum well structure | Park Youn-Ho; Lee, Tae-young; 김경호; Kim Hyung-jun; Koo, Hyun Cheol; Chang, Joonyeon; Han, Suk Hee |
| 2005-06 | Electron Transport of Low Transmission Barrier between Ferromagnet and Two-Dimensional Electron Gas (2DEG) | 구현철; 이현정; 장준연; 한석희; 고재범; J.D.Song |
| 2005-03 | Electron-hole separation in InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Song, JD; Lee, JI |
| 2014-02-03 | Electronic-state-controlled reset operation in quantum dot resonant-tunneling single-photon detectors | Weng, Q. C.; An, Z. H.; Zhu, Z. Q.; Song, J. D.; Choi, W. J. |
| - | Epitaxial Relationship of Fe/MgO on InxGa1-xAs Substrates | Kim Kyung Ho; Kim Hyung-jun; shin il jae; HAN, JUN HYUN; Han, Suk Hee |
| 2005-02 | Evidence of coupling between InAs self-assembled quantum dots in thin GaAs buffer layer | Cho, ET; Lee, HD; Lee, DW; Lee, JI; Jung, SI; Yoon, JJ; Leem, JY; Han, IK |
| 2017-08-16 | Experimental triple-slit interference in a strongly driven V-type artificial atom | Dada, Adetunmise C.; Santana, Ted S.; Koutroumanis, Antonios; Ma, Yong; Park, Suk-In; Song, Jindong; Gerardot, Brian D. |
| 2000-05 | Fabrication of quantum dot transistors incorporating a single self-assembled quantum dot | Jung, SK; Hwang, SW; Ahn, D; Park, JH; Kim, Y; Kim, EK |
| - | Gate controlled spin-orbit coupling in the InAs quantum well structure | Kim Kyung-ho; Kim Hyung-jun; Oh Jungwoo |
| - | Generation of interface states due to quantum dot grown in Au/GaAs Schottky diode structures | Choi, Won Jun; Hyoungdo Nam; Lee, Jung Il; YOU, BYUNG YONG; SONG, JIN-DONG; H. Yang; A. Chovet |
| - | Generation of Polarization Shaped Terahertz Waves | 이강희; 이민우; SONG, JIN-DONG; 안재욱 |
| - | Growth of GaAs on Si substrate using InAs defect reduction layer | Choi, Won Jun; Cjo Nam Ki; Lim Ju Young; SONG, JIN-DONG; Lee, Jung Il |
| 2011-09 | Growth of high-quality InSb layer on (001) Si substrate with an initial intermediate-layer of InAs quantum dots | Lim, J. Y.; Song, J. D.; Choi, W. J.; Ahn, J. P.; Yang, H. S. |
| - | Growth of InAs and InP nanowires using Au nanoparticle catalyst in molecular beam epitaxy | KyuHyoek Yoen; Lee Eunhye; BaeMinHwan; Kim Jun Young; SONG, JIN-DONG |
| - | Growth of Sb-based compound semiconductor nano structures for the application to high-speed electronics and infrared sensors | SONG, JIN-DONG; Lim Ju Young; Shin Sang Hoon; Su youn, Kim; Lee Eunhye |
