Browsing byAuthorSong, J. D.

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Showing results 24 to 53 of 83

Issue DateTitleAuthor(s)
2010-03Effect of different strain reducing layers on InAs quantum dots grown by migration enhanced epitaxyRyu, S. P.; Cho, N. K.; Lim, J. Y.; Choi, W. J.; Song, J. D.; Lee, J. I.; Lee, Y. T.; Park, C. G.
2010-02Effect of growth parameters on the formation of three-dimensional InAs islands on (001) silicon substrateLim, J. Y.; Song, J. D.; Choi, W. J.; Yang, H. S.
2014-04Effect of Growth Temperature and Quantum Structure on InAs/GaAs Quantum Dot Solar CellPark, M. H.; Kim, H. S.; Park, S. J.; Song, J. D.; Kim, S. H.; Lee, Y. J.; Choi, W. J.; Park, J. H.
2011-05Effect of InAs Thickness on the Structural and the Electrical Properties of InAs Layers Grown on GaAs Substrates with an AlAs0.32Sb0.68 Buffer LayerKim, S. Y.; Song, J. D.; Kim, T. W.
2007-09-01Effect of rapid thermal annealing on the noise properties of InAs/GaAs quantum dot structuresArpatzanis, N.; Tsormpatzoglou, A.; Dimitriadis, C. A.; Song, J. D.; Choi, W. J.; Lee, J. I.; Charitidis, C.
2007-07-15Effect of symmetric and asymmetric In0.2Ga0.8As wells on the structural and optical properties of InAs quantum dots grown by migration enhanced molecular beam epitaxy for the application to a 1.3 mu m laser diodeRyu, S. P.; Lee, Y. T.; Cho, N. K.; Choi, W. J.; Song, J. D.; Lee, J. I.; Kwack, H. S.; Cho, Y. H.
2014-08Effects of Growth and Annealing Temperatures on the Structural and the Optical Properties of In0.6Al0.4As/Al0.4Ga0.6As Quantum DotsKim, S. Y.; Song, J. D.; Han, I. K.; Kim, T. W.
2012-07Effects of Growth Parameters on the Structural and Optical Properties of InP/InGaP Quantum Structures for 808-nm-Wavelength EmissionsKim, S. Y.; Song, J. D.; Han, I. K.; Kim, T. W.
2008-11Effects of the AlSb Buffer Layer and the InAs Channel Thickness on the Electrical Properties of InAs/AlSb-Based 2-DEG HEMT StructuresShin, S. H.; Lim, J. Y.; Song, J. D.; Kim, H. J.; Han, S. H.; Kim, T. G.
2012-11Electronic states and interband transitions of strained InzGaxAl1-z-xP/In0.5Al0.5P multiple quantum wellsKim, D. H.; You, J. H.; Kim, T. W.; Song, J. D.; Yoo, K. H.; Kim, S. Y.
2014-02-03Electronic-state-controlled reset operation in quantum dot resonant-tunneling single-photon detectorsWeng, Q. C.; An, Z. H.; Zhu, Z. Q.; Song, J. D.; Choi, W. J.
2006-05Energy states in InAs-GaAs quantum dots-in-asymmetric-well infrared photodetector structureNam, H. D.; Doyennette, L.; Song, J. D.; Choi, W. J.; Yang, H. S.; Lee, J. I.; Julien, F. H.
2014-04Enhanced ferromagnetism by preventing antiferromagnetic MnO2 in InP:Be/Mn/InP:Be triple layers fabricated using molecular beam epitaxyLee, D. J.; Park, C. S.; Lee, Cheol Jin; Song, J. D.; Koo, H. C.; Yoon, Chong S.; Yoon, Im Taek; Kim, H. S.; Kang, T. W.; Shon, Yoon
2013-10-21Excited exciton and biexciton localised states in a single quantum ringKim, H. D.; Kyhm, K.; Taylor, R. A.; Nicolet, A. A. L.; Potemski, M.; Nogues, G.; Je, K. C.; Lee, E. H.; Song, J. D.
2014-04Fabrication of GaAs/Al0.3Ga0.7As Multiple Quantum Well Nanostructures on (100) Si Substrate Using a 1-nm InAs Relief LayerOh, H. J.; Park, S. J.; Lim, J. Y.; Cho, N. K.; Song, J. D.; Lee, W.; Lee, Y. J.; Myoung, J. M.; Choi, W. J.
2013-04-21Formation of self-assembled large droplet-epitaxial GaAs islands for the application to reduced reflectionLee, E. H.; Song, J. D.; Yoon, J. J.; Bae, M. H.; Han, I. K.; Choi, W. J.; Chang, S. K.; Kim, Y. D.; Kim, J. S.
2019-10-16Fundamental Limits to Coherent Photon Generation with Solid-State Atomlike TransitionsKoong, Z. X.; Scerri, D.; Rambach, M.; Santana, T. S.; Park, S., I; Song, J. D.; Gauger, E. M.; Gerardot, B. D.
2014-03Growth of catalyst-free GaAs nanowire with As pulse injection for full zinc-blende structureYoen, K. H.; Lee, E. H.; Kim, S. Y.; Park, T. E.; Bae, M. H.; Song, J. D.
2011-09Growth of high-quality InSb layer on (001) Si substrate with an initial intermediate-layer of InAs quantum dotsLim, J. Y.; Song, J. D.; Choi, W. J.; Ahn, J. P.; Yang, H. S.
2018-11Growth of pure wurtzite InGaAs nanowires for photovoltaic and energy harvesting applicationsKang, H. -K.; Kim, J. Y.; Noh, M. -S.; Kang, C. -Y.; Kim, Y. D.; Cho, M. -H.; Song, J. D.
2011-11High-power 745-nm Laser Diode Utilizing InP/InGaP Quantum Structures Grown by Using Migration Enhanced EpitaxyHa, S. K.; Song, J. D.; Han, I. K.; Ko, D. Y.; Kim, S. Y.; Lee, E. H.
2008-12Ideality factor dependence of capacitance and reverse current noise in Au/n-GaAs Schottky diodes with embedded self-assembled InAs quantum dotsArpatzanis, N.; Hastas, N. A.; Dimitriadis, C. A.; Charitidis, C.; Song, J. D.; Choi, W. J.; Lee, J. I.
2014-11-06InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 KPark, M. S.; Jain, V.; Lee, E. H.; Kim, S. H.; Pettersson, H.; Wang, Q.; Song, J. D.; Choi, W. J.
2009-10-19Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formationDasika, V. D.; Song, J. D.; Choi, W. J.; Cho, N. K.; Lee, J. I.; Goldman, R. S.
2013-03-11Interband transitions and dielectric functions of InGaSb alloysKim, T. J.; Yoon, J. J.; Byun, J. S.; Hwang, S. Y.; Aspnes, D. E.; Shin, S. H.; Song, J. D.; Liang, C. -T.; Chang, Y. -C.; Barange, N. S.; Kim, J. Y.; Kim, Y. D.
2009-09-14Interband transitions of InAsxSb1-x alloy filmsKim, T. J.; Yoon, J. J.; Hwang, S. Y.; Aspnes, D. E.; Kim, Y. D.; Kim, H. J.; Chang, Y. C.; Song, J. D.
2020-03-04Intrinsically p-type cuprous iodide semiconductor for hybrid light-emitting diodesAhn, D.; Song, J. D.; Kang, S. S.; Lim, J. Y.; Yang, S. H.; Ko, S.; Park, S. H.; Park, S. J.; Kim, D. S.; Chang, H. J.; Chang, Joonyeon
2006-10Low frequency noise in GaAs structures with embedded In(Ga)As quantum dotsLee, J. I.; Nam, H. D.; Choi, W. J.; Yu, B. Y.; Song, J. D.; Hong, S. C.; Noh, S. K.; Chovet, A.
2014-09Low gain threshold density of a single InGaP quantum well sandwiched by digital alloyKim, B.; Kyhm, K.; Je, K. C.; Song, J. D.; Kim, S. Y.; Le, E. H.; Taylor, R. A.
2018-08Magneto-optical Transitions of GaAs/AlGaAs Multiple Quantum WellsKim, Yongmin; Song, J. D.; Kohama, Y.

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