1998-01 | Effect of Sr content on the oriented growth of SrBi2Ta2O9 thin films | 배철휘; 이전국; 이시형; 정형진 |
1995-01 | Effect of Yttrium Dopping on the Ferroelectric Fatigue and Switching Characteristics of Pb(Zr0.65Ti0.35)O3 Thin Films Prepared By Sol-Gel Processing | Kim, J.H.; Paik, D.S.; Park, C.Y.; Jeong, H.J. |
2005-09 | Effects of annealing process on dielectric properties of (Ba,Sr)TiO3 thin films grown by RF magnetron sputtering | Ha, JY; Choi, JW; Kang, CY; Karmanenko, SF; Yoon, SJ; Choi, DJ; Kim, HJ |
1999-09-15 | Effects of Bi-Pt alloy on electrical characteristics of Pt/SrBi2Ta2O9/CeO2/Si ferroelectric gate structure | Kim, YT; Shin, DS; Park, YK; Choi, IH |
1998-09 | Effects of morphological changes of Pt/SrBi2Ta2O9 interface on the electrical properties of ferroelectric capacitor | Shin, DS; Lee, HN; Lee, CW; Kim, YT; Choi, IH |
2001-04 | Electrical characteristics of Pt/SrBi2Ta2O9/Ta2O5/Si using Ta2O5 as the buffer layer | Choi, HS; Kim, YT; Kim, SI; Choi, IH |
1996-05 | Electrical characterization of Pt/SrBi2Ta2O9/Pt capacitors fabricated by the pulsed laser ablated deposition technique | Lee, JK; Jung, HJ; Auciello, O; Kingon, AI |
1998-08 | Electrical properties of Pt/SrBi2Ta2O9/CeO2/SiO2/Si structure for nondestructive readout memory | Shin, DS; Lee, HN; Kim, YT; Choi, IH; Kim, BH |
- | Electrical properties of Pt/SrBi2Ta2O9/Ta2O5/Si ferroelectric gate structure | 최훈상; Kim Yong Tae; Kim Seong Il; 최인훈; Hoon Sang Choi; Seong Il Kim; In-Hoon Choi |
2003-03-03 | Electro-optic characteristics of (001)-oriented Ba0.6Sr0.4TiO3 thin films | Kim, DY; Moon, SE; Kim, EK; Lee, SJ; Choi, JJ; Kim, HE |
2012-07 | Emerging memories: resistive switching mechanisms and current status | Jeong, Doo Seok; Thomas, Reji; Katiyar, R. S.; Scott, J. F.; Kohlstedt, H.; Petraru, A.; Hwang, Cheol Seong |
1999-09 | Ex situ growth of the c-axis preferred oriented SrBi2Ta2O9 thin films on Pt/Ti/SiO2/Si substrates | Bae, C; Lee, JK; Lee, SH; Jung, HJ |
- | Fabrication and characterization of Pt/SrBi2Ta2O9(SBT)/CeO2/Si metal ferroelectric insulator semiconductor field effect transistor (MFISFET) memory by using the inductively coupled plasma reactive ion etching (ICP RIE) process | Sun Il Shim; Jung Ho Park; Young Suk Kwon; Kim, Seong Il; Kim, Yong Tae |
2006-08 | Ferroelectric nanotubes array growth in anodic porous alumina nanoholes on silicons | Min, Hyung-Seob; Lee, Jeon-Kook |
2016-01-08 | Frustration of Negative Capacitance in Al2O3/BaTiO3 Bilayer Structure | Kim, Yu Jin; Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Jeon, Woojin; Moon, Taehwan; Do Kim, Keum; Jeong, Doo Seok; Yamada, Hiroyuki; Hwang, Cheol Seong |
2012-09 | Ge2Sb2Te5 as a Ferroelectric: A Single-Element Low-Voltage Dynamic Memory | Lee, Sang Hyeon; Kim, Moonkyung; Cheong, Byung-Ki; Lee, Jo-Won; Tiwari, Sandip |
2006-12 | Improvement in tunability and dielectric loss of BSTZ ferroelectric thin films using post-annealing | Ha, Jong-Yoon; Kang, Chong-Yun; Choi, Ji-Won; Sim, Sung-Hun; Karmanenko, S. F.; Yoon, Seok-Jin; Kim, Hyun-Jai |
2003-11-01 | Improvement of electrical properties of ferroelectric gate oxide structure by using Al2O3 thin films as buffer insulator | Choi, HS; Lim, GS; Lee, JH; Kim, YT; Kim, SI; Yoo, DC; Lee, JY; Choi, IH |
1998-11 | Improvement of ferroelectric properties by heat treating SrBi2(Ta1-xNbx)(2)O-9/Bi2O3/SrBi2(Ta1-xNbx)(2)O-9 heterostructure | Park, YB; Lee, JK; Jung, HJ; Park, JW |
2007-04-16 | Influence of applied electric field annealing on the microwave properties of (Ba0.5Sr0.5)TiO3 thin films | Cho, Kwang-Hwan; Lee, Chil-Hyoung; Kang, Chong-Yun; Yoon, Seok-Jin; Lee, Young-Pak |
2020-01 | Investigation of phases and chemical states of tin titanate films grown by atomic layer deposition | Chung, Hong Keun; Pyeon, Jung Joon; Baek, In-Hwan; Lee, Ga-Yeon; Lee, Hansol; Won, Sung Ok; Han, Jeong Hwan; Chung, Taek-Mo; Park, Tae Joo; Kim, Seong Keun |
2018-08-28 | Lead-free piezoelectric materials and composites for high power density energy harvesting | Maurya, Deepam; Peddigari, Mahesh; Kang, Min-Gyu; Geng, Liwei D.; Sharpes, Nathan; Annapureddy, Venkateswarlu; Palneedi, Haribabu; Sriramdas, Rammohan; Yan, Yongke; Song, Hyun-Cheol; Wang, Yu U.; Ryu, Jungho; Priya, Shashank |
2000-06 | Low temperature processing of SrBi2Ta2O9 thin films | 배철휘; 이전국; 박동균; 정형진 |
2018-10 | Mechanical Fatigue Resistance of Piezoelectric PVDF Polymers | Shin, Youn-Hwan; Jung, Inki; Park, Hyunchul; Pyeon, Jung Joon; Son, Jeong Gon; Koo, Chong Min; Kim, Sangtae; Kang, Chong-Yun |
1995-01 | Microstructure and ferroelectric properties of sol-gel derived PbTiO₃ interlayered PZT thin films | 임동길; 최세영; 정형진; 오영제 |
1998-05 | Microstructure-dependent ferroelectric properties of SrBi2Ta2O9 thin films fabricated by radio frequency magnetron sputtering | Cho, KJ; Lee, JK; Jung, HJ; Park, JW |
2004-08 | Multiple bit operation of MFISFET with Pt/SrBi2Ta2O9/Y2O3/Si gate structure | Il Shim, S; Kwon, YS; Kim, IS; Kim, SI; Kim, YT; Park, JH |
2013-09-06 | Non-Volatile Control of 2DEG Conductivity at Oxide Interfaces | Kim, Shin-Ik; Kim, Dai-Hong; Kim, Yoonjung; Moon, Seon Young; Kang, Min-Gyu; Choi, Jong Kwon; Jang, Ho Won; Kim, Seong Keun; Choi, Ji-Won; Yoon, Seok-Jin; Chang, Hye Jung; Kang, Chong-Yun; Lee, Suyoun; Hong, Seong-Hyeon; Kim, Jin-Sang; Baek, Seung-Hyub |
2000-06 | Orientation control of SrBi2Ta2O9 thin films on Pt (111) substrates | 이시형; 이전국; 배철휘; 정형진; 윤기현 |
- | Reversibility of domain switching of multiferroic BiFeO3 | Hye Jung Chang; S.V.Kaliin; S.Y. Yang; R. Ramesh; S.J. Pannycook; A.Y. Borisevich |