| 2010-04-12 | High stability of amorphous hafnium-indium-zinc-oxide thin film transistor | Chong, Eugene; Jo, Kyoung Chul; Lee, Sang Yeol |
| 2011-08-01 | Improvement of bias stability of indium zinc oxide thin film transistors by the incorporation of hafnium fabricated by radio-frequency magnetron sputtering | Chong, Eugene; Chun, Yoon Soo; Kim, Seung Han; Lee, Sang Yeol |
| 2012-01 | Influence of a highly doped buried layer for HfInZnO thin-film transistors | Chong, Eugene; Lee, Sang Yeol |
| 2011-04-29 | Localization effect of a current-path in amorphous In-Ga-Zn-O thin film transistors with a highly doped buried-layer | Chong, Eugene; Jeon, Yong Woo; Chun, Yoon Soo; Kim, Dae Hwan; Lee, Sang Yeol |
| 2011-08-08 | Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress | Kim, Bosul; Chong, Eugene; Kim, Do Hyung; Jeon, Yong Woo; Kim, Dae Hwan; Lee, Sang Yeol |
| 2012 | Reduction of channel resistance in amorphous oxide thin-film transistors with buried layer | Chong, Eugene; Kim, Bosul; Lee, Sang Yeol |
| 2012-12 | Role of Si as carrier suppressor in amorphous Zn-Sn-O | Kang, IlJoon; Park, Chul Hong; Chong, Eugene; Lee, Sang Yeol |
| 2010-12-20 | Role of silicon in silicon-indium-zinc-oxide thin-film transistor | Chong, Eugene; Kim, Seung Han; Lee, Sang Yeol |
| 2011-07 | The relationship between processing parameters and the performance of novel amorphous silicon-indium-zinc oxide thin film transistors | Chong, Eugene; Kim, Seung Han; Cho, Eun Ah; Jang, Gun-Eik; Lee, Sang Yeol |
