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Showing results 7 to 10 of 10

Issue DateTitleAuthor(s)
2015-10Growth of AlN/GaN HEMT structure Using Indium-surfactantKim, Jeong-Gil; Won, Chul-Ho; Kim, Do-Kywn; Jo, Young-Woo; Lee, Jun-Hyeok; Kim, Yong-Tae; Cristoloveanu, Sorin; Lee, Jung-Hee
2016-10Novel AlGaN/GaN Omega-FinFETs with Excellent Device PerformancesIm, Ki-Sik; Won, Chul-Ho; Seo, Jae Hwa; Kang, In Man; Vodapally, Sindhuri; Lee, Yong Soo; Lee, Jung-Hee; Kim, Yong-Tae; Cristoloveanu, Sorin
2016-06Temperature-dependent characteristics of AlGaN/GaN FinFETs with sidewall MOS channelIm, Ki-Sik; Kang, Hee-Sung; Kim, Do-Kywn; Vodapally, Sindhuri; Park, YoHan; Lee, Jae-Hoon; Kim, Yong-Tae; Cristoloveanu, Sorin; Lee, Jung-Hee
2017-12Z(2)-FET as Capacitor-Less eDRAM Cell For High-Density IntegrationNavarro, Carlos; Duan, Meng; Parihar, Mukta Singh; Adamu-Lema, Fikru; Coseman, Stefan; Lacord, Joris; Lee, Kyunghwa; Sampedro, Carlos; Cheng, Binjie; El Dirani, Hassan; Barbe, Jean-Charles; Fonteneau, Pascal; Kim, Seong-Il; Cristoloveanu, Sorin; Bawedin, Maryline; Millar, Campbell; Galy, Philippe; Le Royer, Cyrille; Karg, Siegfried; Riel, Heike; Wells, Paul; Kim, Yong-Tae; Asenov, Asen; Gamiz, Francisco
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