| 2003-04 | Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In0.53Ga0.47As/In-0.53(Ga0.6Al0.4)(0.47)As quantum well laser structure with InGaAlAs digital alloys by thermal annealing | Yu, JS; Song, JD; Kim, JM; Bae, SJ; Lee, YT; Lim, H |
| 2006-04-01 | InAs/GaAs quantum dot lasers with dots in an asymmetric InxGa1-xAs quantum well structure | Choi, WJ; Song, JD; Lee, JI; Kim, KC; Kim, TG |
| 2004-10-15 | Influence of arsenic during indium deposition on the formation of the wetting layers of InAs quantum dots grown by migration enhanced epitaxy | Song, JD; Park, YM; Shin, JC; Lim, JG; Park, YJ; Choi, WJ; Han, IK; Lee, JI; Kim, HS; Park, CG |
| 2005-08 | Influence of impurity-free vacancy diffusion on the optical and optoelectronic properties of the In0.53Ga0.47As/In0.52Al0.48As multiple quantum wells electroabsorption modulator structure | Yu, JS; Song, JD; Lee, YT; Lim, H |
| 2004-01 | Influence of semiconductor cap layer on the impurity-free vacancy disordering of the In0.2Ga0.8As/GaAs multiquantum-well structure by dielectric capping layers | Yu, JS; Song, JD; Kim, JM; Lee, YT; Lim, H |
| 2004-01 | Initiation and evolution of phase separation in GaP/InP short-period superlattices | Shin, B; Chen, W; Goldman, RS; Song, JD; Kim, JM; Lee, YT |
| 2004-11-15 | Interdiffusion and structural change in an InGaAs dots-in-a-well structure by rapid thermal annealing | Park, YM; Park, YJ; Kim, KM; Song, JD; Lee, JI; Yoo, KH; Kim, HS; Park, CG |
| 2004-07 | Investigation of detection wavelength in quantum dot infrared photodetector | Hwang, SH; Shin, JC; Song, JD; Choi, WJ; Lee, JI; Han, H; Kim, EK |
| 2005-02 | Low-frequency noise characteristics of InGaAs quantum-dot infrared photodetector structures grown by atomic layer molecular-beam epitaxy | Choi, WJ; Song, JD; Hwang, SH; Lee, JI; Kim, JH; Song, JI; Kim, EK; Chovet, A |
| 2004-10-01 | MBE growth and optical properties of digital-alloy 1.55 mu m multi-quantum wells | Song, JD; Choi, WJ; Kim, JM; Chang, KS; Lee, YT |
| 2005 | Optical and electrical characterization of quantum dot infrared photodetector structure treated with hydrogen-plasma | Nam, HD; Song, JD; Choi, WJ; Lee, JI; Yang, HS |
| 2005-11 | Optical and electronic properties in (In0.53Ga0.47As)(1-z)/(In0.52Al0.48As)(z) digital alloys | Woo, JT; Kim, JH; Kim, TW; Song, JD; Park, YJ |
| 2005-11-01 | Optical properties of digital-alloy In-0.49(Ga1-zAlz0.51P/GaAs and InGaP/In-0.49(Ga1-zAlz)(0.51)P multi-quantum wells grown by molecular-beam epitaxy | Kim, JM; Park, CY; Lee, YT; Song, JD |
| 2004-06-15 | Optical properties of silicon nanoparticles by ultrasound-induced solution method | Lee, S; Cho, WJ; Chin, CS; Han, IK; Choi, WJ; Park, YJ; Song, JD; Lee, JI |
| 2004-07 | Optical studies of self-assembled InGaAs/GaAs quantum dot structures drown by atomic layer epitaxy | Rho, H; Song, JD; Park, YJ; Choi, WJ; Lee, JI |
| 2004-02-09 | Parametric study on optical properties of digital-alloy In(Ga1-zAlz)As/InP grown by molecular-beam epitaxy | Song, JD; Heo, DC; Han, IK; Kim, JM; Lee, YT; Park, SH |
| 2004-07 | Photoluminescence and electromodulation study of InAs/GaAs quantum dots | Kim, SS; Cheong, H; Song, JD; Park, YM; Shin, JC; Park, YJ; Choi, WJ; Lee, JI |
| 2005-03 | Photovoltaic In0.5Ga0.5As/GaAs quantum dot infrared photodetector with a single-sided Al0.3Ga0.7As layer | Hwang, SH; Shin, JC; Song, JD; Choi, WJ; Lee, JI; Han, H; Lee, SW |
| 2006-02 | Polarized optical properties of a GaInP lateral superlattice | Min, KI; Lim, JR; Kim, JS; Rho, H; Hahn, JR; Song, JD; Choi, WJ; Kim, JM; Lee, YT |
| 2005-02 | Raman scattering from InGaAs/GaAs quantum dot structures grown by atomic layer molecular beam epitaxy | Choi, WJ; Rho, H; Song, JD; Lee, JI; Cho, YH |
| 2004-12 | Spatially-resolved optical studies on intermixing of InGaAs quantum-dot laser structures by using an AlAs native oxide and thermal annealing | Kwon, BJ; Hwang, JS; Cho, YH; Cho, NK; Jeon, HS; Song, JD; Choi, WJ; Lee, JI; Rho, H |
| 2004-11-15 | State filling phenomena in modulation-doped InAs quantum dots | Park, YM; Park, YJ; Kim, KM; Shin, JC; Song, JD; Lee, JI; Yoo, KH |
| 2006-05 | Structural and optical properties of In0.5Ga0.5As/GaAs quantum dots in an In0.1Ga0.9As well using repeated depositions of InAs/GaAs short-period superlattices for the application of optical communication | Song, JD; Choi, WJ; Lee, JI; Lee, JY |
| 2004-08 | Structural, optical, and electrical characterizations of a quantum cascade laser structure | Park, HK; Kim, JS; Kim, EK; Lee, CH; Song, JD; Han, IK |
| 2005-11-15 | Structure and thermal stability of InAs/GaAs quantum dots grown by atomic layer epitaxy and molecular beam epitaxy | Kim, HS; Suh, JH; Park, CG; Lee, SJ; Noh, SK; Song, JD; Park, YJ; Choi, WJ; Lee, JI |
| 2004-11 | Study on superluminescent diodes using InGaAs-InAs chirped quantum dots | Han, IK; Heo, DC; Song, JD; Lee, JI |
