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Showing results 21 to 35 of 35

Issue Date	Title	Author(s)
2006-10	Low frequency noise in GaAs structures with embedded In(Ga)As quantum dots	Lee, J. I.; Nam, H. D.; Choi, W. J.; Yu, B. Y.; Song, J. D.; Hong, S. C.; Noh, S. K.; Chovet, A.
2006-09	Low-frequency noise in high-k gate dielectric nanoscale MOSFETs	Han, I. K.; Nam, H. D.; Choi, W. J.; Lee, J. I.; Szentpali, B.; Chovet, A.
2019-02	Microcavity Effect in InAs/GaAs Quantum Dot Infrared Photodetector on a Si Substrate Fabricated With Metal Wafer Bonding and Epitaxial Lift-Off Techniques	Kim, Ho Sung; Ryu, G. H.; Ahn, S. Y.; Ryu, H. Y.; Choi, W. J.
2009-07-01	Nanometer-scale measurements of electronic states in InAs/GaAs quantum dots	Dasika, V. D.; Goldman, R. S.; Song, J. D.; Choi, W. J.; Cho, N. K.; Lee, J. I.
2007-05	On the concept of imaging nanoscale vector fields - Response	Lee, K. G.; Kihm, H. W.; Kihm, J. E.; Choi, W. J.; Kim, H.; Ropers, C.; Park, D. J.; Yoon, Y. C.; Choi, S. B.; Woo, D. H.; Kim, J.; Lee, B.; Park, Q. H.; Lienau, Ch.; Kim, D. S.
2006-05	Optical and structural properties of InGaAs/InP double quantum wells grown by molecular beam epitaxy with polycrystalline GaAs and GaP decomposition sources	Song, J. D.; Choi, W. J.; Lee, J. I.; Kim, J. M.; Chang, K. S.; Lee, Y. T.
2013-07-01	Optical properties of AlAsxSb1-x alloys determined by in situ ellipsometry	Kim, J. Y.; Yoon, J. J.; Kim, T. J.; Kim, Y. D.; Lee, E. H.; Bae, M. H.; Song, J. D.; Choi, W. J.; Liang, C. -T.; Chang, Y. -C.
2006-06	Photoluminescence and Raman studies of an ln(x)Ga(1-x)P quantum wire structure fabricated using lateral composition modulation	Lim, Jung-Ran; Rho, Heesuk; Song, J. D.; Choi, W. J.; Kim, J. M.; Lee, Y. T.
2011-08	Quantum dot-like effect in InGaAs/GaAs quantum well	Abdellatif, M. H.; Song, J. D.; Choi, W. J.; Cho, N. K.; Lee, J. I.
2009-09	Raman scattering studies of (GaP)(n)/(InP)(n) (n=1, 1.7, 2) short-period superiattice structures	Rho, H.; Lim, J-R.; Song, J. D.; Choi, W. J.; Lee, Y. T.
2009-04	Rapid thermal annealing temperature dependence of noise properties in Au/n-GaAs Schottky diodes with embedded InAs quantum dots in asymmetric In0.2Ga0.8As wells	Arpatzanis, N.; Hastas, N. A.; Dimitriadis, C. A.; Konstantinidis, G.; Charitidis, C.; Song, J. D.; Choi, W. J.; Lee, J. I.
2006-11	Study on the energy-band structure of an InAs/InGaAs/GaAs quantum-dot infrared photodetector structure	Kim, J. S.; Kim, E. K.; Song, J. D.; Choi, W. J.; Lee, J. I.
2012-11	The effect of post-growth thermal annealing on the emission spectra of GaAs/AlGaAs quantum dots grown by droplet epitaxy	Moon, Pilkyung; Lee, J. D.; Ha, S. K.; Lee, E. H.; Choi, W. J.; Song, J. D.; Kim, J. S.; Dang, L. S.
2007-01	Vector field microscopic imaging of light	Lee, K. G.; Kihm, H. W.; Kihm, J. E.; Choi, W. J.; Kim, H.; Ropers, C.; Park, D. J.; Yoon, Y. C.; Choi, S. B.; Woo, D. H.; Kim, J.; Lee, B.; Park, Q. H.; Lienau, C.; Kim, D. S.
2014-04	Vertical Growth of Core-Shell III-V Nanowires for Solar Cells Application	Kim, D. Y.; Bae, M. H.; Shin, J. C.; Kim, Y. J.; Lee, Y. J.; Choi, K. J.; Seong, T. Y.; Choi, W. J.

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