Showing results 2 to 3 of 3
Issue Date | Title | Author(s) |
---|---|---|
2023 | Simulation of a Recessed Channel Ferroelectric-Gate Field-Effect Transistor with a Dual Ferroelectric Gate Stack for Memory Application | Chen, Simin; Ahn, Dae-Hwan; An, Seong Ui; Kim, Younghyun |
2024-05 | TCAD simulation study of dual ferroelectric gate field-effect transistors with a recessed channel geometry for non-volatile memory applications | Chen, Simin; Ahn, Dae-Hwan; An, Seong Ui; Noh, Tae Hyeon; Kim, Younghyun |