| 2000-03 | Low-temperature growth of GaN by atomic nitrogen based on a dielectric barrier discharge | Kim, J; Byun, D; Kim, JS; Kum, DW |
| 1999-11-16 | New pretreatment method of sapphire for GaN deposition | Byun, D; Kim, HJ; Hong, CH; Park, CS; Kim, G; Koh, SK; Choi, WK; Kum, DW |
| 1996-11-30 | Optimization of the GaN-buffer growth on 6H-SiC(0001) | Byun, D; Kim, G; Lim, D; Lee, D; Choi, IH; Park, D; Kum, DW |
| 2000-04-03 | Photocatalytic TiO2 deposition by chemical vapor deposition | Byun, D; Jin, Y; Kim, B; Lee, JK; Park, D |
| 2001-12 | Postannealing effect of GaN on reactive ion beam pre-treated sapphire | Lee, SJ; Byun, D; Ko, J; Hong, CH; Kim, G |
| 1998-08-04 | Reactive ion (N-2(+)) beam pretreatment of sapphire for GaN growth | Byun, D; Jeong, J; Kim, HJ; Koh, SK; Choi, WK; Park, D; Kum, DW |
| 2001-11 | Reduction of defects in GaN on reactive ion beam treated sapphire by annealing | Byun, D; Jhin, J; Cho, S; Kim, J; Lee, SJ; Hong, CH; Kim, G; Choi, WK |
| 1999-07 | Sapphire surface modified by a reactive ion beam for GaN depositions | Kim, HJ; Kim, J; Byun, D; Park, D; Kum, DW |
| 2002-01 | Structural analysis on photocatalytic efficiency of TiO2 by chemical vapor deposition | Kim, B; Byun, D; Lee, JK; Park, D |
| 2006-02-21 | The effect of direct current bias on the characteristics of Cu/C : H composite thin films on poly ethylene terephthalate film prepared by electron cyclotron resonance-metal organic chemical vapor deposition | Jeon, BJ; Ko, H; Hyun, H; Byun, D; Lee, JK |
| 1997-06 | The effect of substrate surface morphology on GaN by MOCVD | Kum, DW; Byun, D; Kim, G |
| 2003-02 | The effects of H-2/N-2 mixed gas-plasma pretreatment of sapphire(0001) surface on the characteristics of GaN epilayers | Kim, J; Park, YJ; Byun, D; Kim, EK; Koh, EK; Park, IW |
