| 1999-11-16 | New pretreatment method of sapphire for GaN deposition | Byun, D; Kim, HJ; Hong, CH; Park, CS; Kim, G; Koh, SK; Choi, WK; Kum, DW |
| 1996-11-30 | Optimization of the GaN-buffer growth on 6H-SiC(0001) | Byun, D; Kim, G; Lim, D; Lee, D; Choi, IH; Park, D; Kum, DW |
| 1998-08-04 | Reactive ion (N-2(+)) beam pretreatment of sapphire for GaN growth | Byun, D; Jeong, J; Kim, HJ; Koh, SK; Choi, WK; Park, D; Kum, DW |
| 1999-07 | Sapphire surface modified by a reactive ion beam for GaN depositions | Kim, HJ; Kim, J; Byun, D; Park, D; Kum, DW |
| 1996-04-15 | Simple procedure for phase identification using convergent beam electron diffraction patterns | Kim, GH; Kim, HS; Kum, DW |
| 1998-11 | Surface modification of alpha-Al2O3(0001) by N-2(+) ion irradiation | Choi, WK; Choi, SC; Jung, HJ; Koh, SK; Byun, DJ; Kum, DW |
| 1997-06 | The effect of substrate surface morphology on GaN by MOCVD | Kum, DW; Byun, D; Kim, G |
| 1997-10 | The effect of substrate surface roughness on GaN growth using MOCVD process | Kum, DW; Byun, DJ |
| 1999-07 | X-ray diffraction peak from minor phase in mechanically alloyed Al-Ti | Kim, HS; Jeong, HG; Hanada, S; Kum, DW |
