Showing results 40 to 54 of 54
Issue Date | Title | Author(s) |
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2014-06 | Optical properties of amorphous Ge1-x Se (x) and Ge1-x-y Se (x) As (y) thin films - optical gap bowing and phonon modes | Lee, Hosuk; So, Hyeon Seob; Lee, Hosun; Shin, Hae-Young; Yoon, Seokhyun; Ahn, Hyung-Woo; Kim, Su-Dong; Lee, Suyoun; Jeong, Doo-Seok; Cheong, Byung-ki |
2007-04 | Origin of nonlinear optical characteristics of crystalline Ge-Sb-Te thin films for possible superresolution effects | Lee, Hyun Seok; Cheong, Byung-ki; Lee, Taek Sung; Jeong, Jeung-Hyun; Lee, Suyoun; Kim, Won Mok; Kim, Donghwan |
2021-09 | Ovonic threshold switching induced local atomic displacements in amorphous Ge60Se40 & nbsp;film probed via in situ EXAFS under DC electric field | Shin, Sang Yeol; Kim, Hyun; Golovchak, Roman; Cheong, Byung-ki; Jain, Himanshu; Choi, Yong Gyu |
2007-01 | Patterning of Ge2Sb2Te5 phase change material using UV nano-imprint lithography | Yang, Ki-Yeon; Hong, Sung-Hoon; Kim, Deok-kee; Cheong, Byung-ki; Lee, Heon |
2011-09 | Pt/Ti/Al2O3/Al tunnel junctions exhibiting electroforming-free bipolar resistive switching behavior | Jeong, Doo Seok; Cheong, Byung-ki; Kohlstedt, Hermann |
2007-03 | Real time optical-electrical characterization of PbTe thin film material for super-resolution optical memory | Lee, Hyun Seok; Lee, Taek Sung; Jeong, Jeung-hyun; Lee, Suyoun; Kim, Won Mok; Cheong, Byung-ki |
2007-01-15 | Response to "Comment on 'Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases'" [J. Appl. Phys. 97, 093509 (2005)] | Lee, Bong-Sub; Abelson, John R.; Bishop, Stephen G.; Kang, Dae-Hwan; Cheong, Byung-ki; Kim, Ki-Bum |
2006-08-30 | Room temperature synthesized GaAs quantum dot embedded in SiO2 composite film | Lee, Sunghun; Shin, Dong Wook; Kim, Won Mok; Cheong, Byung-ki; Lee, Taek Sung; Lee, Kyeong Seok; Cho, Sunghun |
2020-06-23 | Simple Artificial Neuron Using an Ovonic Threshold Switch Featuring Spike-Frequency Adaptation and Chaotic Activity | Lee, Milim; Cho, Seong Won; Kim, Seon Jeong; Kwak, Joon Young; Ju, Hyunsu; Yi, Yeonjin; Cheong, Byung-ki; Lee, Suyoun |
2014-09-01 | Structural basis of temperature-dependent electrical resistance of evaporation-deposited amorphous GeSe film | Shin, Sang Yeol; Golovchak, Roman; Lee, Suyoun; Cheong, Byung-ki; Jain, Himanshu; Choi, Yong Gyu |
2014-11-18 | The effect of doping Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on Ge-Se | Shin, Sang-Yeol; Choi, J. M.; Seo, Juhee; Ahn, Hyung-Woo; Choi, Yong Gyu; Cheong, Byung-ki; Lee, Suyoun |
2010-01 | The effect of Ge addition on the RESET operation of a phase-change memory (PCM) device using Ge-doped SbTe | Park, Young-wook; Lee, Hyun Seok; Ahn, Hyung Woo; Wu, Zhe; Lee, Suyoun; Jeong, Jeung-hyun; Jeong, Doo Seok; Yi, Kyung-woo; Cheong, Byung-ki |
2006-10-09 | Thermal conductivity of phase-change material Ge2Sb2Te5 | Lyeo, Ho-Ki; Cahill, David G.; Lee, Bong-Sub; Abelson, John R.; Kwon, Min-Ho; Kim, Ki-Bum; Bishop, Stephen G.; Cheong, Byung-ki |
2012-05-15 | Threshold resistive and capacitive switching behavior in binary amorphous GeSe | Jeong, Doo Seok; Lim, Hyungkwang; Park, Goon-Ho; Hwang, Cheol Seong; Lee, Suyoun; Cheong, Byung-ki |
2012-02-06 | Understanding on the current-induced crystallization process and faster set write operation thereof in non-volatile phase change memory | Kang, Dae-Hwan; Kim, Nan Young; Jeong, Hongsik; Cheong, Byung-ki |