1999-01 | Preparation of N-doped hydrogen-free diamondlike carbon and its application to field emitters | Moon, JH; Chung, SJ; Han, FJ; Jang, J; Jung, JH; Ju, BK; Oh, MH |
1999-05 | Roughness of ZnS : Pr,Ce/Ta2O5 interface and its effects on electrical performance of alternating current thin-film electroluminescent devices | Lee, YH; Kim, YS; Ju, BK; Oh, MH |
1999 | Self-generated light emitting device using micromachined Si mirror arrays | Ju, BK; Lee, YH; Oh, MH |
1996-09 | Silicon field emitters coated with diamond-like carbon | Chung, B; Cho, H; Lee, S; Ko, TY; Lee, JY; Jeon, D; Lee, KR; Joo, BK; Oh, MH |
1999-01 | Silicon-to-indium tin oxide coated glass bonding for packaging of field emission arrays fabricated on silicon wafer | Choi, WB; Ju, BK; Lee, YH; Oh, MH; Lee, NY; Sung, MY |
1999-09 | The influence of surface roughness on the electric conduction process in amorphous Ta2O5 thin films | Kim, YS; Sung, MY; Lee, YH; Juh, BK; Oh, MH |
1996-09 | Thickness effects of SiOxNy interlayer inserted between BaTiO3 insulating layer and ZnS:Mn phosphor layer in thin film electroluminescent devices | Song, MH; Lee, YH; Hahn, TS; Oh, MH; Yoon, KH |
1997-03 | Thin film phosphor prepared by physical vapor deposition for field emission display application | Lee, YH; Song, MH; Ju, BK; Shin, DK; Oh, MH |
2001-12-15 | Uncooled thermopile infrared detector with chromium oxide absorption layer | Lee, SJ; Lee, YH; Suh, SH; Oh, YJ; Kim, TY; Oh, MH; Kim, CJ; Ju, BK |
1999 | Vacuum packaging using anodic bonding and emission characteristics of FED | Lee, DJ; Ju, BK; Jeong, JW; Kim, H; Jung, SJ; Jang, J; Oh, MH |
1997-01 | White-light emitting thin-film electroluminescent device using micromachined structure | Lee, YH; Ju, BK; Song, MH; Kim, DK; Hahn, TS; Oh, MH |