Browsing byAuthorCheong, Byung-ki
Showing results 48 to 54 of 54
| Issue Date | Title | Author(s) |
|---|---|---|
| 2020-06-23 | Simple Artificial Neuron Using an Ovonic Threshold Switch Featuring Spike-Frequency Adaptation and Chaotic Activity | Lee, Milim; Cho, Seong Won; Kim, Seon Jeong; Kwak, Joon Young; Ju, Hyunsu; Yi, Yeonjin; Cheong, Byung-ki; Lee, Suyoun |
| 2014-09-01 | Structural basis of temperature-dependent electrical resistance of evaporation-deposited amorphous GeSe film | Shin, Sang Yeol; Golovchak, Roman; Lee, Suyoun; Cheong, Byung-ki; Jain, Himanshu; Choi, Yong Gyu |
| 2014-11-18 | The effect of doping Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on Ge-Se | Shin, Sang-Yeol; Choi, J. M.; Seo, Juhee; Ahn, Hyung-Woo; Choi, Yong Gyu; Cheong, Byung-ki; Lee, Suyoun |
| 2010-01 | The effect of Ge addition on the RESET operation of a phase-change memory (PCM) device using Ge-doped SbTe | Park, Young-wook; Lee, Hyun Seok; Ahn, Hyung Woo; Wu, Zhe; Lee, Suyoun; Jeong, Jeung-hyun; Jeong, Doo Seok; Yi, Kyung-woo; Cheong, Byung-ki |
| 2006-10-09 | Thermal conductivity of phase-change material Ge2Sb2Te5 | Lyeo, Ho-Ki; Cahill, David G.; Lee, Bong-Sub; Abelson, John R.; Kwon, Min-Ho; Kim, Ki-Bum; Bishop, Stephen G.; Cheong, Byung-ki |
| 2012-05-15 | Threshold resistive and capacitive switching behavior in binary amorphous GeSe | Jeong, Doo Seok; Lim, Hyungkwang; Park, Goon-Ho; Hwang, Cheol Seong; Lee, Suyoun; Cheong, Byung-ki |
| 2012-02-06 | Understanding on the current-induced crystallization process and faster set write operation thereof in non-volatile phase change memory | Kang, Dae-Hwan; Kim, Nan Young; Jeong, Hongsik; Cheong, Byung-ki |
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