2005-11-01 | Si-based magnetic tunnel transistor with single CoFe base layer | Jang, SH; Kim, YW; Lee, JH; Kim, KY |
1996-12-01 | SiC-TiC and SiC-TiB2 composites densified by liquid-phase sintering | Cho, KS; Kim, YW; Choi, HJ; Lee, JG |
2001-04 | Slow crack growth behavior in Si3N4 sintered with Yb2Si2O7 tie-line composition additives | Choi, HJ; Kim, HJ; Lee, JG; Kim, YW |
2003-05-15 | Structural changes in the nano-oxide layer with annealing in specular spin valves | Jang, SH; Kim, YW; Kang, T; Kim, HJ; Kim, KY |
2003-11 | Surface characterization of biocompatible polysulfone membranes modified with poly(ethylene glycol) derivatives | Kim, YW; Kim, JJ; Kim, YH |
2002-08-01 | The effect of plasma exposure and annealing atmosphere on shallow junction formation using plasma source ion implantation | Cho, J; Han, S; Lee, Y; Kim, OK; Kim, GH; Kim, YW; Lim, H |
2004-10 | The effects of strained sapphire(0001) substrate on the structural quality of GaN epilayer | Cho, YS; Kim, J; Park, YJ; Na, HS; Kim, HJ; Kim, HJ; Yoon, E; Kim, YW |
2001-02-02 | The measurement of nitrogen ion species ratio in inductively coupled plasma source ion implantation | Cho, J; Han, S; Lee, Y; Kim, OK; Kim, GH; Kim, YW; Lim, H; Suh, M |
2004-08-02 | Time-resolved plasma measurement in a high-power pulsed ICP source for large area | Kim, YW; Jung, YD; Han, S; Lee, Y; Kim, GH |