Browsing byAuthorHwang, Cheol Seong

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Showing results 90 to 105 of 105

Issue DateTitleAuthor(s)
2017-09-28Ta-Doped SnO2 as a reduction-resistant oxide electrode for DRAM capacitorsCho, Cheol Jin; Noh, Myoung-Sub; Lee, Woo Chul; An, Cheol Hyun; Kang, Chong-Yun; Hwang, Cheol Seong; Kim, Seong Keun
2022-10Temperature-dependent bandgap of (In,Ga)As via P5Grand: A Python Package for Property Prediction of Pseudobinary systems using Grand canonical ensembleHan Gyu Seung; Yeu In Won; Ye, Kun Hee; Yoon SeungJae; Jeong, Tae Young; Lee, Seung-Cheol; Hwang, Cheol Seong; Choi, Jung-Hae
2012-04-30The charge trapping characteristics of Si3N4 and Al2O3 layers on amorphous-indium-gallium-zinc oxide thin films for memory applicationJung, Ji Sim; Rha, Sang-Ho; Kim, Un Ki; Chung, Yoon Jang; Jung, Yoon Soo; Choi, Jung-Hae; Hwang, Cheol Seong
2022-07The Contrasting Impacts of the Al2O3 and Y2O3 Insertion Layers on the Crystallization of ZrO2 Films for Dynamic Random Access Memory CapacitorsSeo, Haengha; Yeu, In Won; Kwon, Dae Seon; Kim, Dong Gun; Lim, Junil; Kim, Tae Kyun; Paik, Heewon; Choi, Jung-Hae; Hwang, Cheol Seong
2013-03The Electrical Properties of Asymmetric Schottky Contact Thin-Film Transistors with Amorphous-In2Ga2ZnO7Rha, Sang Ho; Kim, Un Ki; Jung, Jisim; Kim, Hyo Kyeom; Jung, Yoon Soo; Hwang, Eun Suk; Chung, Yoon Jang; Lee, Mijung; Choi, Jung-Hae; Hwang, Cheol Seong
2012-07The Impact of Carbon Concentration on the Crystalline Phase and Dielectric Constant of Atomic Layer Deposited HfO2 Films on Ge SubstrateJung, Hyung-Suk; Jeon, Sang Ho; Kim, Hyo Kyeom; Yu, Il-Hyuk; Lee, Sang Young; Lee, Joohwi; Chung, Yoon Jang; Cho, Deok-Yong; Lee, Nae-In; Park, Tae Joo; Choi, Jung-Hae; Han, Seungwu; Hwang, Cheol Seong
2013-06-17Theoretical and experimental studies on the electronic structure of crystalline and amorphous ZnSnO3 thin filmsLee, Joohwi; Cho, Deok-Yong; Jung, Jisim; Kim, Un Ki; Rha, Sang Ho; Hwang, Cheol Seong; Choi, Jung-Hae
2019-12-15Theoretical understanding of the catalyst-free growth mechanism of GaAs < 111 > B nanowiresYeu, In Won; Han, Gyuseung; Park, Jaehong; Hwang, Cheol Seong; Choi, Jung-Hae
2013-10Thermodynamic stability of various phases of zinc tin oxides from ab initio calculationsLee, Joohwi; Lee, Seung-Cheol; Hwang, Cheol Seong; Choi, Jung-Hae
2012-05-15Threshold resistive and capacitive switching behavior in binary amorphous GeSeJeong, Doo Seok; Lim, Hyungkwang; Park, Goon-Ho; Hwang, Cheol Seong; Lee, Suyoun; Cheong, Byung-ki
2013-02Titanium dioxide thin films for next-generation memory devicesKim, Seong Keun; Kim, Kyung Min; Jeong, Doo Seok; Jeon, Woojin; Yoon, Kyung Jean; Hwang, Cheol Seong
2019-03-07Tunneling Properties of the Charge Carriers through Sub-2-nm-Thick Oxide in Ge/a-GeO2/Ge Structures Using the First-Principles Scattering-State MethodKo, Eunjung; Liu, Kai; Hwang, Cheol Seong; Choi, Hyoung Joon; Choi, Jung-Hae
2024-04Understanding phase evolution of ferroelectric Hf0.5Zr0.5O2 thin films with Al2O3 and Y2O3 inserted layersShin, Jonghoon; Seo, Haengha; Ye, Kun Hee; Jang, Yoon Ho; Kwon, Dae Seon; Lim, Junil; Kim, Tae Kyun; Paik, Heewon; Song, Haewon; Kim, Ha Ni; Byun, Seungyong; Shin, Seong Jae; Kim, Kyung Do; Lee, Yong Bin; Lee, In Soo; Choi, Jung-Hae; Hwang, Cheol Seong
2013-11Variation in the threshold voltage of amorphous-In2Ga2ZnO7 thin-film transistors by ultrathin Al2O3 passivation layerRha, Sang Ho; Kim, Un Ki; Jung, Jisim; Hwang, Eun Suk; Lee, Seung Jun; Jean, Woojin; Yoo, Yeon Woo; Choi, Jung-Hae; Hwang, Cheol Seong
2012-05-14Vertically integrated submicron amorphous-In2Ga2ZnO7 thin film transistor using a low temperature processRha, Sang Ho; Jung, Jisim; Jung, Yoon Soo; Chung, Yoon Jang; Kim, Un Ki; Hwang, Eun Suk; Park, Byoung Keon; Park, Tae Joo; Choi, Jung-Hae; Hwang, Cheol Seong
2014-02X-ray Irradiation Induced Reversible Resistance Change in Pt/TiO2/Pt CellsChang, Seo Hyoung; Kim, Jungho; Phatak, Charudatta; D&apos;Aquila, Kenneth; Kim, Seong Keun; Kim, Jiyoon; Song, Seul Ji; Hwang, Cheol Seong; Eastman, Jeffrey A.; Freeland, John W.; Hong, Seungbum

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