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Showing results 14 to 17 of 17

Issue DateTitleAuthor(s)
-Thin body n- and p-GaAs FET on Si for CMOS integrationShim Jae Phil; Ju, Gunwu; kim seong kwang; KIM HANSUNG; Sanghyeon Kim; Kim Hyung-jun
-Thin body p-GaAs junctionless FET on Si via wafer bonding and epitaxial lift-off technologyShim Jae-Phil; Ju, Gunwu; KIM HANSUNG; kim seong kwang; LIM HEEJEONG; Sanghyeon Kim; Kim Hyung-jun
-Ultra-Thin Body Ge(110)-OI on Si fabrication from Ge/AlAs/GaAs Substrate via wafer bonding technologyShim Jae Phil; KIM HANSUNG; Ju, Gunwu; Hyeong rak Lim; Kim Seong Kwang; Jae-Hoon Han; Sanghyeon Kim; Kim Hyung-jun
2022-11Vertical homo-junction In0.53Ga0.47As tunneling field-effect transistors with minimum subthreshold swing of 52 mV/decadeBaek, Ji-Min; Kim, Hyo-Jin; Yoo, Ji-Hoon; Shin, Ju-Won; Shin, Ki-Yong; Amir, Walid; Ju, Gunwu; Kim, Hyung-Jun; Oh, Joohee; Kim, Hyoungsub; Kim, Tae-Woo; Kim, Dae-Hyun
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