Browsing byAuthorBawedin, M.

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Showing results 1 to 5 of 5

Issue DateTitleAuthor(s)
2018-05A review of the Z(2)-FET 1T-DRAM memory: Operation mechanisms and key parametersCristoloveanu, S.; Lee, K. H.; Parihar, M. S.; El Dirani, H.; Lacord, J.; Martinie, S.; Le Royer, C.; Barbe, J. -Ch.; Mescot, X.; Fonteneau, P.; Galy, Ph.; Gamiz, F.; Navarro, C.; Cheng, B.; Duan, M.; Adamu-Lema, F.; Asenov, A.; Taur, Y.; Xu, Y.; Kim, Y-T.; Wan, J.; Bawedin, M.
2016-10Competitive 1T-DRAM in 28 nm FDSOI Technology for Low-Power Embedded MemoryEl Dirani, H.; Bawedin, M.; Lee, K.; Parihar, M.; Mescot, X.; Fonteneau, P.; Galy, Ph.; Gamiz, F.; Kim, Y-T.; Ferrari, P.; Cristoloveanu, S.
2015-05Special memory mechanisms in SOI devicesCristoloveanu, S.; Bawedin, M.; Navarro, C.; Chang, S.-J.; Wan, J.; Andrieu, F.; Le, Royer C.; Rodriguez, N.; Gamiz, F.; Zaslavsky, A.; Kim, Y.T.
2017-06-25Ultra-low power 1T-DRAM in FDSOI technologyEl Dirani, H.; Lee, K. H.; Parihar, M. S.; Lacord, J.; Martinie, S.; Barbe, J-Ch.; Mescot, X.; Fonteneau, P.; Broquin, J. -E.; Ghibaudo, G.; Galy, Ph; Gamiz, F.; Taur, Y.; Kim, Y. -T.; Cristoloveanu, S.; Bawedin, M.
2015-11-01Unusual gate coupling effect in extremely thin and short FDSOI MOSFETsChang, S. -J.; Bawedin, M.; Andrieu, F.; Navarro, C.; Kim, Y. T.; Bae, Y.; Cristoloveanu, S.

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