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Showing results 1 to 3 of 3

Issue DateTitleAuthor(s)
2024-01A Back-Illuminated SPAD Fabricated With 40 nm CMOS Image Sensor Technology Achieving Near 40% PDP at 940 nmEun sung Park; Ha, Won-Yong; Sung, Park Hyo; Eom Do Yoon; Choi, Hyun Seung; Ahn, Daehwan; Choi, Woo-Young; Lee, Myung-Jae
2023-06-15Doping-Optimized Back-illuminated Single-Photon Avalanche Diode in Stacked 40 nm CIS Technology Achieving 60% PDP at 905 nmEun sung Park; Ha, Won-Yong; Eom, Do Yoon; Ahn, Daehwan; An, Hyuk; Yi, Suhyun; Kim, Kyung-Do; Kim, Jongchae; Choi, Woo-Young; Lee, Myung-Jae
2022-04Noise optimization of single-photon avalanche diodes fabricated in 110 nm CMOS image sensor technologyHa, Won-Yong; Park, Eunsung; Park, Byungchoul; Chae, Youngcheol; Choi, Woo-Young; Lee, Myung-Jae
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