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Showing results 1 to 30 of 67

Issue DateTitleAuthor(s)
-A study on the effect of catalysts to SIC nanowire growth by APCVD using hexamethyldisilane.양재웅; 노대호; Byun Dongjin; Kim Jae Soo
2003-05A study on the low temperature growth of SiC film with a 1,3-DSB precursor양재웅; 노대호; 윤진국; 김재수
-Ar and H2 gas effects of SiO2 nanowires growthKIM NA-RI; Kim, Jae Soo; 변동진; 노대호; 양재웅; 이재훈
-Caracterization of SiC nanowire Grown by APCVD using single precursor노대호; Kim, Jae Soo; 변동진; 양재웅; 이재훈; KIM NA-RI
2002-08Characteristics of microstructure of hardfacing layer of stellite 6 with Mo addition신종철; 김재수; 이덕열; 양재웅; 윤진국; 노대호; 이종권
-Characteristics of SiC film using TetramethylsilaneKIM NA-RI; Kim, Jae Soo; 노대호; 이재훈; Ahn myoung-won; 변동진
-Characterization of sound absorption and fabrication of sound absorption materials using Al composite노대호; Kim Jae Soo; Byun Dongjin; 양재웅; 손인진; 진정근; Kim Na Ri
2004-03CNT-confined reaction에 의한 탄화규소 나노튜브의 합성노대호; 김재수; 변동진; 양재웅; 김나리
-Effects of metal catayst to SiC nanowire growth노대호; Kim, Jae Soo; 변동진; 양재웅; 이재훈; KIM NA-RI
-Effects of the catalyst to growth of the SiC nanowire and CNTs노대호; 변동진; KIM NA-RI; Kim, Jae Soo; 양재웅; 이재훈
-Fabrication of SiC and SiC composites by FAPACS노대호; Byun Dongjin; Kim Jae Soo; 손인진; 양재웅; 진정근; Kim Na Ri
-Fabrication of SiCxNy nanowires by VLS growth mechanismAhn myoung-won; Kim, Jae Soo; 양재웅; 노대호; KIM NA-RI; 이재훈
-Gas effect of the SiO2 nanowire growthKIM NA-RI; 변동진; 노대호; Kim, Jae Soo; 이재훈; 양재웅
-Growh and characterization of SiC nanowires노대호; Kim, Jae Soo; 변동진; 이재훈; 양재웅; KIM NA-RI; 진정근
-Growth and characteristics of SiCN nanowire노대호; Kim, Jae Soo; 변동진; 이재훈; 양재웅; KIM NA-RI; 진정근
-Growth and Characteristics of Silica nanowires Grown by Vapor Evaporation method노대호; Kim, Jae Soo; 변동진; 양재웅; 진정근; KIM NA-RI
-Growth and characterization of SiC film using single precursorsKIM NA-RI; Kim, Jae Soo; 변동진; 이재훈; 양재웅; 노대호; 진정근
-Growth and characterization of SiC nanowires노대호; Kim, Jae Soo; 변동진; 이재훈; 양재웅; KIM NA-RI; 진정근
-Growth and characterization of SiOx nanowires by VLS and SLS growth mechanism노대호; Kim, Jae Soo; 변동진; 양재웅; 이재훈; KIM NA-RI
-Growth and characterizaton of SiC film using single precursorsKIM NA-RI; Kim, Jae Soo; 변동진; 이재훈; 노대호; 진정근
-Growth of Si nanowires by SLS (Solid-Liquid-Solid) growth mechanismKIM NA-RI; Kim, Jae Soo; 변동진; 진정근; 노대호; 양재웅
-Growth of SiC nanorod by carbothermal reaction.노대호; Kim Jae Soo; Byun Dongjin; 진정근; 양재웅; 이영민
-Growth of SiC nanorod using HMDS노대호; Kim Jae Soo; Byun Dongjin; 진정근; 양재웅; 이영민
2003-09Growth of SiC nanorod using single precursor노대호; 김재수; 변동진; 양재웅; 김나리
2003-06Growth of SiC nanorods using Fe and hexamethyldisilabutane노대호; 김재수; 변동진; 양재웅; 김나리
-Growth of SiC nanorods using various metal catalysts by carbothermal reduction method.노대호; Kim Jae Soo; Byun Dongjin; 양재웅; 진정근; Kim Na Ri; 이영민
-Growth of SiC nanowire using HMDS and APCVD on Si substrate노대호; Kim, Jae Soo; 변동진; 이재훈; KIM NA-RI
-Growth of SiC nanowire using SLS growth mechanism노대호; Kim Jae Soo; Byun Dongjin; 양재웅; 진정근; Kim Na Ri; 이영민
-Growth of SiC, SiCN nanowires using CNTs노대호; Kim, Jae Soo; 변동진; 양재웅; 이재훈; KIM NA-RI
-Growth of SiCN nanowires grown by CVD using metal catalyst노대호; Kim, Jae Soo; 변동진; 이재훈; KIM NA-RI; Ahn myoung-won; 양재웅

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