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Issue DateTitleAuthor(s)
2010-01The effect of Ge addition on the RESET operation of a phase-change memory (PCM) device using Ge-doped SbTePark, Young-wook; Lee, Hyun Seok; Ahn, Hyung Woo; Wu, Zhe; Lee, Suyoun; Jeong, Jeung-hyun; Jeong, Doo Seok; Yi, Kyung-woo; Cheong, Byung-ki
1

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