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Issue DateTitleAuthor(s)
-Buried-Gate Fin and Recess Channel MOSFET for Sub-30 nm DRAM Cell Transistors with High Performance and Low GIDL CurrentJae Young Song; Jong Pil Kim; Sang Wan Kim; Jeong-Hoon Oh; Kyung-Chang Ryoo; Park Jae Hyun; Garam Kim; Hyun Woo Kim; Atteq Ur Rehman; Jong Duk Lee; Hyungcheol Shin; Byung-Gook Park
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