| 1995-09-15 | DECREASE OF THE NUMBER OF THE ISOLATED EMISSION CENTER MN2+ IN AN AGED ZNS-MN ELECTROLUMINESCENT DEVICE | LEE, YH; KIM, DH; JU, BK; SONG, MH; HAHN, TS; CHOH, SH; OH, MH |
| 1995-02 | EFFECT OF MULTILAYERED SRS-SRS-CE-SRS PHOSPHOR PREPARED BY MULTISOURCE DEPOSITION METHOD ON THE THIN-FILM ELECTROLUMINESCENT DEVICES | LEE, YH; KIM, DH; JU, BK; YEOM, TH; HAHN, TS; OH, MH; CHOH, SH |
| 1994-02-01 | FABRICATION OF SILICON MEMBRANE USING FUSION BONDING AND 2-STEP ELECTROCHEMICAL ETCH-STOPPING | JU, BK; OH, MH; TCHAH, KH |
| 1993-03-01 | INTERFACIAL OXIDE-GROWTH AND FILLING-UP BEHAVIOR OF THE MICRO-GAP IN SILICON FUSION BONDING PROCESSES | JU, BK; OH, MH; TCHAH, KH |
| 1994-02-01 | LUMINESCENCE AND ELECTRON-PARAMAGNETIC-RESONANCE STUDIES OF WHITE-LIGHT EMITTING SRS-PR,F THIN-FILM ELECTROLUMINESCENT DEVICES | LEE, YH; JU, BK; YEOM, TH; KIM, DH; HAHN, TS; CHOH, SH; OH, MH |
| 1992-11 | MICROSCOPY STUDIES FOR THE DEEP-ANISOTROPIC ETCHING OF (100) SI WAFERS | JU, BK; HA, BJ; KIM, CJ; OH, MH; TCHAH, KH |
| 1995-02 | ON THE ANISOTROPICALLY ETCHED BONDING INTERFACE OF DIRECTLY BONDED (100) SILICON-WAFER PAIRS | JU, BK; LEE, YH; TCHAH, KH; OH, MH |
