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Issue DateTitleAuthor(s)
-Reduction of the threshold voltage fluctuation in an electrical phase change memory device with a Ge1Sb2Te4/TiN cell structureDae-Hwan Kang; KIM, TAE-GYUN; JUNG, HAN-JU; LEE, TAEK SUNG; Kim In-ho; LEE, KYEONG SEOK; KIM, WON MOK; CHEONG, BYUNG KI; AHN, DONG-HO; KWON, MIN-HO; KWON, HYUK-SOON; KIM, KI-BUM
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