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Showing results 1 to 4 of 4

Issue DateTitleAuthor(s)
2014-02-15Chemical structures and electrical properties of atomic layer deposited HfO2 thin films grown at an extremely low temperature (<= 100 degrees C) using O-3 as an oxygen sourceKim, Jeong Hwan; Park, Tae Joo; Kim, Seong Keun; Cho, Deok-Yong; Jung, Hyung-Suk; Lee, Sang Young; Hwang, Cheol Seong
2012-01Properties of Atomic Layer Deposited HfO2 Films on Ge Substrates Depending on Process TemperaturesJung, Hyung-Suk; Kim, Hyo Kyeom; Yu, Il-Hyuk; Lee, Sang Young; Lee, Joohwi; Park, Jinho; Jang, Jae Hyuck; Jeon, Sang-Ho; Chung, Yoon Jang; Cho, Deok-Yong; Lee, Nae-In; Park, Tae Joo; Choi, Jung-Hae; Hwang, Cheol Seong
2012-09Reduction of Charge Trapping in HfO2 Film on Ge Substrates by Atomic Layer Deposition of Various Passivating Interfacial LayersJung, Hyung-Suk; Yu, Il-Hyuk; Kim, Hyo Kyeom; Lee, Sang Young; Lee, Joohwi; Choi, Yujin; Chung, Yoon Jang; Lee, Nae-In; Park, Tae Joo; Choi, Jung-Hae; Hwang, Cheol Seong
2012-07The Impact of Carbon Concentration on the Crystalline Phase and Dielectric Constant of Atomic Layer Deposited HfO2 Films on Ge SubstrateJung, Hyung-Suk; Jeon, Sang Ho; Kim, Hyo Kyeom; Yu, Il-Hyuk; Lee, Sang Young; Lee, Joohwi; Chung, Yoon Jang; Cho, Deok-Yong; Lee, Nae-In; Park, Tae Joo; Choi, Jung-Hae; Han, Seungwu; Hwang, Cheol Seong
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