| 1994-08 | CARBON DOPING CHARACTERISTICS OF GAAS AND AL0.3GA0.7AS GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION USING CCL4 | KIM, SI; KIM, Y; KIM, MS; KIM, CK; MIN, SK; LEE, C |
| 1993-01 | CHARACTERISTICS OF HEAVILY CARBON-DOPED GAAS BY LPMOCVD AND CRITICAL LAYER THICKNESS | KIM, SI; EOM, KS; KIM, Y; KIM, MS; MIN, SK; LEE, C; KWAK, MH; MA, DS |
| 1993-08 | ELECTRICAL CHARACTERISTICS OF CARBON-DOPED GAAS | KIM, SI; KIM, MS; KIM, Y; EOM, KS; MIN, SK; LEE, CC |
| 1993-11 | EXPERIMENTAL AND THEORETICAL PHOTOLUMINESCENCE STUDY OF HEAVILY CARBON-DOPED GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION | KIM, SI; KIM, MS; MIN, SK; LEE, CC |
| 1995-11 | FACET EVOLUTION OF CCL4-DOPED AL0.5GA0.5AS/GAAS MULTILAYERS DURING METALORGANIC CHEMICAL-VAPOR-DEPOSITION ON PATTERNED GAAS SUBSTRATES | KIM, Y; PARK, YK; KIM, MS; KANG, JM; KIM, SI; HWANG, SM; MIN, SK |
| 1994-04 | FRIEDEL-CRAFTS ALKYLATION OF SUBSTITUTED BENZENES BY ALLYLDICHLOROSILANE | LEE, BW; YOO, BR; KIM, SI; JUNG, IN |
| 1995-01 | GROWTH-BEHAVIOR ON V-GROOVED HIGH MILLER INDEX GAAS SUBSTRATES BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION | KIM, MS; KIM, Y; LEE, MS; PARK, YJ; KIM, SI; MIN, SK |
| 1993-12 | HALL-MOBILITY AND TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE OF CARBON-DOPED GAAS | KIM, SI; KIM, Y; LEE, MS; KIM, MS; MIN, SK; LEE, CC |
| 1993-05-01 | LOW-TEMPERATURE PHOTOLUMINESCENCE CHARACTERISTICS OF CARBON-DOPED GAAS | KIM, SI; KIM, MS; KIM, Y; EOM, KS; MIN, SK; LEE, C |
| 1993-12 | PROBLEMS AND SOLUTIONS INVOLVED IN DIRECT SYNTHESIS OF ALLYLCHLOROSILANES | YEON, SH; LEE, BW; KIM, SI; JUNG, IN |
| 1993-11-29 | PROPERTIES OF THE QUANTUM WIRES GROWN ON V-GROOVED AL0.3GA0.7AS/GAAS SUBSTRATE BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION | LEE, MS; KIM, Y; KIM, MS; KIM, SI; MIN, SK; KIM, YD; NAHM, S |
| 1995-03 | TEMPERATURE-DEPENDENT ELECTRICAL-PROPERTIES OF HEAVILY CARBON-DOPED GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION | KIM, SI; SON, CS; LEE, MS; KIM, Y; KIM, MS; MIN, SK |
| 1995-09-25 | THE FABRICATION OF QUANTUM-WIRE STRUCTURES THROUGH APPLICATION OF CCL4 TOWARDS LATERAL GROWTH-RATE CONTROL OF GAAS ON PATTERNED GAAS SUBSTRATES | KIM, Y; PARK, YK; KIM, MS; KANG, JM; KIM, SI; HWANG, SM; MIN, SK |
| 1994-05 | THE FACET EVOLUTION DURING METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH ON V-GROOVED HIGH MILLER INDEX GAAS SUBSTRATES | KIM, MS; KIM, Y; LEE, MS; PARK, YJ; KIM, SI; MIN, SK |
