| 1996 | Deformation modes of the superplastic Al-10wt%Ti alloy at high strain-rates | Kum, DW; Kim, HS; Kim, WT; Suh, SH |
| 1996-02-01 | Determination of titanium solubility in alpha-aluminum during high energy milling | Kim, GH; Kim, HS; Kum, DW |
| 1997-06 | Effect of sapphire nitridation on GaN by MOCVD | Byun, D; Kim, G; Jeong, J; Lee, JI; Park, D; Kum, DW; Kim, B; Yoo, J |
| 2000-06-01 | Effects of reactive ion beam treatment of a sapphire surface to optimite the deposition of GaN films | Kim, HJ; Byun, D; Kim, G; Kum, DW |
| 1996-01 | Epitaxial growth and characterization of GaN films on 6H-SiC by MOVPE | Nam, OH; Kim, GH; Park, D; Yoo, JB; Kum, DW |
| 1998-12-18 | High strain rate superplasticity of an ultrafine grained Al-Ti-Fe alloy | Kum, DW; Kim, WJ; Frommeyer, G |
| 1999-05-06 | Low temperature buffer growth to improve hydride vapor phase epitaxy of GaN | Lee, JW; Paek, HS; Yoo, JB; Kim, GH; Kum, DW |
| 2000-03 | Low-temperature growth of GaN by atomic nitrogen based on a dielectric barrier discharge | Kim, J; Byun, D; Kim, JS; Kum, DW |
| 2005-12 | Microstructure of in situ MOSi2/SiC nanocomposite coating formed on mo substrate by displacement reaction | Yoon, JK; Kim, GH; Doh, JM; Hong, KT; Kum, DW |
| 1999-11-16 | New pretreatment method of sapphire for GaN deposition | Byun, D; Kim, HJ; Hong, CH; Park, CS; Kim, G; Koh, SK; Choi, WK; Kum, DW |
| 1996-11-30 | Optimization of the GaN-buffer growth on 6H-SiC(0001) | Byun, D; Kim, G; Lim, D; Lee, D; Choi, IH; Park, D; Kum, DW |
| 1998-08-04 | Reactive ion (N-2(+)) beam pretreatment of sapphire for GaN growth | Byun, D; Jeong, J; Kim, HJ; Koh, SK; Choi, WK; Park, D; Kum, DW |
| 1999-07 | Sapphire surface modified by a reactive ion beam for GaN depositions | Kim, HJ; Kim, J; Byun, D; Park, D; Kum, DW |
| 1996-04-15 | Simple procedure for phase identification using convergent beam electron diffraction patterns | Kim, GH; Kim, HS; Kum, DW |
| 1998-11 | Surface modification of alpha-Al2O3(0001) by N-2(+) ion irradiation | Choi, WK; Choi, SC; Jung, HJ; Koh, SK; Byun, DJ; Kum, DW |
| 1997-06 | The effect of substrate surface morphology on GaN by MOCVD | Kum, DW; Byun, D; Kim, G |
| 1997-10 | The effect of substrate surface roughness on GaN growth using MOCVD process | Kum, DW; Byun, DJ |
| 1999-07 | X-ray diffraction peak from minor phase in mechanically alloyed Al-Ti | Kim, HS; Jeong, HG; Hanada, S; Kum, DW |
