Showing results 7 to 13 of 13
Issue Date | Title | Author(s) |
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2013-07-22 | Effect of density of localized states on the ovonic threshold switching characteristics of the amorphous GeSe films | Ahn, Hyung-Woo; Jeong, Doo Seok; Cheong, Byung-ki; Lee, Hosuk; Lee, Hosun; Kim, Su-dong; Shin, Sang-Yeol; Kim, Donghwan; Lee, Suyoun |
2013-07 | Effect of Ge Concentration in GexSe1-x Chalcogenide Glass on the Electronic Structures and the Characteristics of Ovonic Threshold Switching (OTS) Devices | Kim, Su-Dong; Ahn, Hyung-Woo; Shin, Sang Yeol; Jeong, Doo Seok; Son, Seo Hee; Lee, Hosun; Cheong, Byung-ki; Shin, Dong Wook; Lee, Suyoun |
2010-03-29 | Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperature | Wu, Zhe; Lee, Suyoun; Park, Young-Wook; Ahn, Hyung-Woo; Jeong, Doo Seok; Jeong, Jeung-hyun; No, Kwangsoo; Cheong, Byung-ki |
2012-04 | Numerical Study on Passive Crossbar Arrays Employing Threshold Switches as Cell-Selection-Devices | Jeong, Doo Seok; Ahn, Hyung-Woo; Kim, Su-Dong; An, Myunggi; Lee, Suyoun; Cheong, Byung-ki |
2014-06 | Optical properties of amorphous Ge1-x Se (x) and Ge1-x-y Se (x) As (y) thin films - optical gap bowing and phonon modes | Lee, Hosuk; So, Hyeon Seob; Lee, Hosun; Shin, Hae-Young; Yoon, Seokhyun; Ahn, Hyung-Woo; Kim, Su-Dong; Lee, Suyoun; Jeong, Doo-Seok; Cheong, Byung-ki |
2016-05 | Relaxation oscillator-realized artificial electronic neurons, their responses, and noise | Lim, Hyungkwang; Ahn, Hyung-Woo; Kornijcuk, Vladimir; Kim, Guhyun; Seok, Jun Yeong; Kim, Inho; Hwang, Cheol Seong; Jeong, Doo Seok |
2014-11-18 | The effect of doping Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on Ge-Se | Shin, Sang-Yeol; Choi, J. M.; Seo, Juhee; Ahn, Hyung-Woo; Choi, Yong Gyu; Cheong, Byung-ki; Lee, Suyoun |