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Showing results 9 to 13 of 13

Issue DateTitleAuthor(s)
2010-03-29Improved stability of a phase change memory device using Ge-doped SbTe at varying ambient temperatureWu, Zhe; Lee, Suyoun; Park, Young-Wook; Ahn, Hyung-Woo; Jeong, Doo Seok; Jeong, Jeung-hyun; No, Kwangsoo; Cheong, Byung-ki
2012-04Numerical Study on Passive Crossbar Arrays Employing Threshold Switches as Cell-Selection-DevicesJeong, Doo Seok; Ahn, Hyung-Woo; Kim, Su-Dong; An, Myunggi; Lee, Suyoun; Cheong, Byung-ki
2014-06Optical properties of amorphous Ge1-x Se (x) and Ge1-x-y Se (x) As (y) thin films - optical gap bowing and phonon modesLee, Hosuk; So, Hyeon Seob; Lee, Hosun; Shin, Hae-Young; Yoon, Seokhyun; Ahn, Hyung-Woo; Kim, Su-Dong; Lee, Suyoun; Jeong, Doo-Seok; Cheong, Byung-ki
2016-05Relaxation oscillator-realized artificial electronic neurons, their responses, and noiseLim, Hyungkwang; Ahn, Hyung-Woo; Kornijcuk, Vladimir; Kim, Guhyun; Seok, Jun Yeong; Kim, Inho; Hwang, Cheol Seong; Jeong, Doo Seok
2014-11-18The effect of doping Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on Ge-SeShin, Sang-Yeol; Choi, J. M.; Seo, Juhee; Ahn, Hyung-Woo; Choi, Yong Gyu; Cheong, Byung-ki; Lee, Suyoun
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