Browsing byAuthorCHEONG, BYUNG KI

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Showing results 17 to 46 of 49

Issue DateTitleAuthor(s)
-Effect of deposition temperature and Ga content on the properties of Ga-doped ZnO filmsSon Ju Myeong; Kim Yong Hyun; LEE, TAEK SUNG; CHEONG, BYUNG KI; Jeung-hyun Jeong; D.Y. Jeong; T.-Y. Seong; KIM, WON MOK
-Effect of the addition of Zn metal on the electrical properties of F doped ZnO filmsKu Dae Young; Kim In-ho; LEE, KYEONG SEOK; LEE, TAEK SUNG; CHEONG, BYUNG KI; Baik, Young Joon; KIM, WON MOK
-Electrical, optical and structural properties of transparent and conducting ZnO thin films doped with Al and F by rf magnetron sputter최병국; Kim In-ho; D.H. Kim; LEE, KYEONG SEOK; LEE, TAEK SUNG; CHEONG, BYUNG KI; Baik, Young Joon; KIM, WON MOK
-Energetics of hexagonal Ge2Sb2Te5 doped with nitrogen or oxygen by ab-initio calculationsKim, Sae-Jin; Jung-Hae Choi; Seung-Cheol Lee; CHEONG, BYUNG KI; 박찬
-Enhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrodeDae-Hwan Kang; Kim Inho; Jeung-hyun Jeong; CHEONG, BYUNG KI; Dong-Ho Ahn; Ki-Bum Kim
-Enhanced Thermal Efficiency of Ge2Sb2Te5 Phase Change Flims Using the Microstructure ModificationDongbok Lee; Ho-ki Lyeo; Lee Hyun Seok; Hyun-Goo Jun; CHEONG, BYUNG KI; Ki-Bum Kim
-Fast and versatile memory behavior of phase change memory with (Ge1Sb2Te4)1-x(Sn1Bi2Te4)x chalcogenide alloy and its kinetic characteristicsDong-Ho Ahn; Tae-Yon Lee; Hyungoo Jun; Dongbok Lee; Dae-Hwan Kang; Jeung-hyun Jeong; CHEONG, BYUNG KI; Ki-Bum Kim
-Fluorine doping effect of ZnO film by RF magnetron sputteringKu Dae Young; Kim In-ho; 이인규; LEE, KYEONG SEOK; JONG-KEUK, PARK; LEE, TAEK SUNG; Baik, Young Joon; CHEONG, BYUNG KI; KIM, WON MOK
-Improved Superresolution Readout by Nitrogen Addition in Ge-doped SbTeLEE, TAEK SUNG; Lee Hyun Seok; Choi Jihoon; Lee Suyoun; KIM, WON MOK; Kim, Jooho; CHEONG, BYUNG KI
-Improved Temperature Dependence of Phase Change Memory Device Using Ge-doped SbTeWu Zhe; Park Young Wook; Hyung-Woo Ahn; Lee Suyoun; Jeung-hyun Jeong; Jeong, Doo Seok; Kwangsoo No; CHEONG, BYUNG KI
-Improvement of the thermal stability of Al doped ZnO filmsKim In-ho; Ku Dae Young; KO JI HOON; LEE, KYEONG SEOK; LEE, TAEK SUNG; CHEONG, BYUNG KI; Baik, Young Joon; KIM, WON MOK
-Investigation on the enhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrodeDae-Hwan Kang; Kim Inho; Jeung-hyun Jeong; CHEONG, BYUNG KI; Dong-Ho Ahn; Dongbok Lee; Hyun-Mi Kim; Ki-Bum Kim
-Investigation on the improved superresolution effect by nitorgen addition in Ge-doped SbTeLee Hyun Seok; LEE, TAEK SUNG; Choi Jihoon; Lee Suyoun; KIM, WON MOK; CHEONG, BYUNG KI
-Material and Device Characteristics of Ge-doped SbTe-N Phase Change Memory MaterialWu Zhe; Lee Suyoun; Jeung-hyun Jeong; Kim Inho; Kim Seul-Cham; Kyu Hwan Oh; CHEONG, BYUNG KI
-On the kinetic characteristics of the set process in a Non-volatile Phase-Change memoryDae-Hwan Kang; CHEONG, BYUNG KI; Jeung-hyun Jeong; LEE, TAEK SUNG; Kim Inho; KIM, WON MOK; Ki-Bum Kim
2004-06-01optical and structural properties of transparent and conducting ZnO thin films doped with Al and F by rf magnetron sputterCHEONG, BYUNG KI
-Optical nonlinearity of Au metal nanoparticle dispersed (Ba,Sr)TiO3 thin filmsLEE, KYEONG SEOK; Kim In-ho; LEE, TAEK SUNG; CHEONG, BYUNG KI; KIM, WON MOK; Yoon Seung Hyun; CHO, KYU MAN; JEON, HEE SUN; KIM, DO SEOK
-Parallels and contrasts in the properties of Ge-Sb-Te phase change alloys and chalcogenide glassesStephen G. Bishop; John R. Abelson; Bong-Sub Lee; Min-Ho Kwon; Stephanie N. Bogle; Ying Xiao; Simone Raoux; Ki-Bum Kim; CHEONG, BYUNG KI; P. Craig Taylor
-Phase Change Material for Potential Use in High density Non-volatile MemoryCHEONG, BYUNG KI; Kim Inho; Jeung-hyun Jeong; Wu Zhe; LEE, TAEK SUNG; KIM, WON MOK; Dae-Hwan Kang; Hee-Suk Chung; Kim Seul-Cham; Kyu Hwan Oh
-Photo-oxidation and the absence of photodarkening in Ge2Sb2Te5 phase change materialBong-Sub Lee; Ying Xiao; Stephen G. Bishop; John R. Abelson; Simone Raoux; Vaughn R. Deline; Min-Ho Kwon; Ki-Bum Kim; CHEONG, BYUNG KI; Heng Li; P. Craig Taylor
-Reduction of the threshold voltage fluctuation in an electrical phase change memory device with a Ge1Sb2Te4/TiN cell structureDae-Hwan Kang; KIM, TAE-GYUN; JUNG, HAN-JU; LEE, TAEK SUNG; Kim In-ho; LEE, KYEONG SEOK; KIM, WON MOK; CHEONG, BYUNG KI; AHN, DONG-HO; KWON, MIN-HO; KWON, HYUK-SOON; KIM, KI-BUM
-Spectroscopic Ellipsometry and Raman Spectroscopy of Ge-doped SbTe Thin FilmsJun-Woo Park; Hosun Lee; Tae Dong Kang; Andrei Sirenko; Lee Hyun Seok; Lee Suyoun; Jeung-hyun Jeong; CHEONG, BYUNG KI
-Stability of nitrogen and oxygen in the hexagonal Ge2Sb2Te5 by ab-initio calculationsKim, Sae-Jin; Jung-Hae Choi; Seung-Cheol Lee; CHEONG, BYUNG KI; Chan Park
-Stability of nitrogen in the hexagonal Ge2Sb2Te5 by ab-initio calculationsKim, Sae-Jin; Jung-Hae Choi; SEUNG CHEOL, LEE; CHEONG, BYUNG KI; 박찬
-Study on Readout Mechanism of Superresolution Read-Only-Memory Disc with Te-based Chalcogenide Thin Films Using Blue laserLee Hyun Seok; LEE, TAEK SUNG; Choi Jihoon; Lee Suyoun; KIM, WON MOK; Donghwan Kim; CHEONG, BYUNG KI
-The Effect of Ge Addition on the Operation Characteristics of a Phase-change Memory(PCM) Device Using Ge-doped SbTePark Young-wook; Lee Hyun Seok; Hyung-Woo Ahn; Wu Zhe; Lee Suyoun; Jeung-hyun Jeong; Jeong, Doo Seok; Kyung-woo Yi; CHEONG, BYUNG KI
-Thermal conductivity of phase change material Ge2Sb2Te5Ho-Ki Lyeo; David G. Cahill; Min-Ho Kwon; Bong-Sub Lee; John R. Abelson; Stephen G. Bishop; Ki-Bum Kim; CHEONG, BYUNG KI
-Unipolar Switching in Pt/GeSexTe1-x/PtJeong, Doo Seok; Son, Seo-hee; Lee Suyoun; CHEONG, BYUNG KI
2006-03지식의 원전 (The Faber Book of Science)CHEONG, BYUNG KI
-(Undefined)Jung-Hae Choi; Kim, Sae-Jin; Joohwi Lee; Seung-Cheol Lee; CHEONG, BYUNG KI; 박찬

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