| 2012-12-10 | Large in-plane permittivity of Ba0.6Sr0.4TiO3 thin films crystallized using excimer laser annealing at 300 degrees C | Kang, Min-Gyu; Cho, Kwang-Hwan; Do, Young Ho; Lee, Young-Jin; Nahm, Sahn; Yoon, Seok-Jin; Kang, Chong-Yun |
| 2010-09-01 | Low voltage ZnO thin-film transistors with Ti-substituted BZN gate insulator for flexible electronics | Cho, Kwang-Hwan; Kang, Min-Gyu; Oh, Seung-Min; Kang, Chong-Yun; Lee, YoungPak; Yoon, Seok-Jin |
| 2012-01 | Low-Temperature Crystallization of Sol-Gel Derived PbZr0.52Ti0.48O3 Thin Films with a Vanadium Additive | Kang, Min-Gyu; Oh, Seung-Min; Cho, Kwang-Hwan; Do, Young-Ho; Paik, Dong-Soo; Cho, Bong-Hee; Kang, Chong-Yun; Nahm, Sahn; Yoon, Seok-Jin |
| 2011-05 | Microstructure and properties of highly elongated (Ba0.5Sr0.5)TiO3 thin films by applied electric field annealing | Cho, Kwang-Hwan; Kang, Chong-Yun; Yoon, Seok-Jin; Lee, YoungPak |
| 2014-07 | Post-calcination, a novel method to synthesize cobalt oxide-based thermoelectric materials | Kang, Min-Gyu; Cho, Kwang-Hwan; Kim, Jin-Sang; Nahm, Sahn; Yoon, Seok-Jin; Kang, Chong-Yun |
| 2012-05 | Significantly reduced leakage currents in organic thin film transistors with Mn-doped Bi2Ti2O7 high-k gate dielectrics | Cho, Kwang-Hwan; Kang, Min-Gyu; Jang, Ho Won; Shin, Hyun Yong; Kang, Chong-Yun; Yoon, Seok-Jin |
| 2010-05 | Titanium-Substituted Bi1.5Zn1.0Nb1.5O7 for High-Density and Low-Temperature-Coefficient-of-Capacitance MIM Capacitor by Low-Temperature Process (300 degrees C) | Cho, Kwang-Hwan; Kang, Min-Gyu; Kang, Chong-Yun; Yoon, Seok-Jin; Lee, YoungPak |
