- | Less surface roughness scattering effects in highly doped Si-channel and ambipolar conduction behavior with Schottky-barrier contacts | Dae-Young Jeon; So Jeong Park; Gyu-Tae Kim; Gerard Ghibaudo; Sebastian Pregl; Thomas Mikolajick; Walter M. Weber |
- | Polarity tuning of multi-layer WSe2 transistors by changing source/drain metal contacts | Nam Deuk Hyeon; Changseon Park; Hong Seok Lee; Dae-Young Jeon |
- | Series resistance characterization of junctionless transistors | Dae-Young Jeon; S. J. Park; M. Mouis; S. Barraud; G. -T. Kim; G. Ghibaudo |
2019-04 | Series Resistance Effects on the Back-gate Biased Operation of Junctionless Transistors | Dae-Young Jeon; So Jeong Park; Mireille Mouis; Sylvain Barraud; Gyu-Tae Kim; Gerard Ghibaudo |
2019-04 | Simple Method for Determining Channel Doping Concentration of Highly Doped FD-SOI Devices | So Jeong Park; Dae-Young Jeon; Gyu-Tae Kim |
2022-01 | Substrate-Biasing Effect on the Operation of Multi-layer MoS2 Field-Effect Transistors with h-BN Dielectric | Jimin Park; Park Chang Seon; Jangyup Son; JUNG WON JUN; Min Park; Dong Su Lee; Dae-Young Jeon |
2019-06 | Temperature dependent Impedance Characteristics of Aligned CNT-Sheets | Nam Deuk Hyeon; Jung Moon Young; Ahn Seung Eon; Dae-Young Jeon |