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Showing results 4 to 6 of 6

Issue DateTitleAuthor(s)
-Electrical Properties of Field Effect Transistor with (Bi,La)Ti3O12 Ferroelectric Gate Film on Y2O3/Si SubstrateHo Jung Chang; Kang Mo Suh; Park Ji Ho; Ho Sung Chang; Soon Chan Hong; Kim, Yong Tae; Makoto Ishida
-Etching characteristics of SrBi2Ta2O9(SBT) and CeO2 layers by using the inductively coupled plasma reactive ion etching (ICP RIE) process and fabrication of metal ferroelectric insulator semiconductor field effect transistor (MFISFET)Sun Il Shim; Young Suk Kwon; Kim, Seong Il; Kim, Yong Tae; Ho Jung Chang; Jung Ho Park
-Prepartion of field effect transistor with (Bi,La)Ti3O12 ferroelectric thin film gateKang Mo Suh; Ji Ho Park; Su Cheol Gong; Ho Jung Chang; Young Chul Chang; Sun Il Shim; Kim, Yong Tae
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