Showing results 52 to 81 of 105
Issue Date | Title | Author(s) |
---|---|---|
2015-12-01 | Improved interface properties of atomic-layer-deposited HfO2 film on InP using interface sulfur passivation with H2S pre-deposition annealing | Jin, Hyun Soo; Cho, Young Jin; Seok, Tae Jun; Kim, Dae Hyun; Kim, Dae Woong; Lee, Sang-Moon; Park, Jong-Bong; Yun, Dong-Jin; Kim, Seong Keun; Hwang, Cheol Seong; Park, Tae Joo |
2010-07-01 | Improved properties of Pt-HfO2 gate insulator-ZnO semiconductor thin film structure by annealing of ZnO layer | Na, Kwang Duk; Kim, Jeong Hwan; Park, Tae Joo; Song, Jaewon; Hwang, Cheol Seong; Choi, Jung-Hae |
2023-08 | Improving the Properties of SrRuO3 Electrode Films Grown by Atomic Layer-Deposited SrO and Pulsed Chemical Vapor-Deposited RuO2 Using Al2O3 Capping Layers | Lim, Junil; Kwon, Dae Seon; Seo, Haengha; Kim, Tae Kyun; Paik, Heewon; Shin, Jonghoon; Song, Haewon; Jang, Yoon Ho; Park, Yu-kyung; Lee, Keonuk; Kim, Young Sin; Choi, Jung-Hae; Hwang, Cheol Seong |
2006-05-01 | Influence of the oxygen concentration of atomic-layer-deposited HfO2 gate dielectric films on the electron mobility of polycrystalline-Si gate transistors | Park, Jaehoo; Park, Tae Joo; Cho, Moonju; Kim, Seong Keun; Hong, Sug Hun; Kim, Jeong Hwan; Seo, Minha; Hwang, Cheol Seong; Won, Jeong Yeon; Jeong, Ranju; Choi, Jung-Hae |
2013-12 | Influences of metal, non-metal precursors, and substrates on atomic layer deposition processes for the growth of selected functional electronic materials | Lee, Sang Woon; Choi, Byung Joon; Eom, Taeyong; Han, Jeong Hwan; Kim, Seong Keun; Song, Seul Ji; Lee, Woongkyu; Hwang, Cheol Seong |
2020-02 | Initial oxidation and surface stability diagram of Ge(100) as a function of the temperature and oxygen partial pressure through ab initio thermodynamics | Liu, Kai; Yeu, In Won; Hwang, Cheol Seong; Choi, Jung-Hae |
2017-03-14 | Interface Engineering for Extremely Large Grains in Explosively Crystallized TiO2 Films Grown by Low-Temperature Atomic Layer Deposition | Cho, Cheol Jin; Kang, Jun-Yun; Lee, Woo Chul; Baek, Seung-Hyub; Kim, Jin-Sang; Hwang, Cheol Seong; Kim, Seong Keun |
2021-11 | InterPhon: Ab initio interface phonon calculations within a 3D electronic structure framework* | Yeu, In Won; Han, Gyuseung; Ye, Kun Hee; Hwang, Cheol Seong; Choi, Jung-Hae |
2019-01 | Markov Chain Hebbian Learning Algorithm With Ternary Synaptic Units | Kim, Guhyun; Kornijcuk, Vladimir; Kim, Dohun; Kim, Inho; Kim, Jaewook; Woo, Hyo Cheon; Kim, Jihun; Hwang, Cheol Seong; Jeong, Doo Seok |
2016-09 | Memristors for Energy-Efficient New Computing Paradigms | Jeong, Doo Seok; Kim, Kyung Min; Kim, Sungho; Choi, Byung Joon; Hwang, Cheol Seong |
2012-03 | Migration of nitrogen in hexagonal Ge2Sb2Te5: An ab-initio study | Kim, Sae-Jin; Lee, Joohwi; Lee, Seung-Cheol; Park, Chan; Hwang, Cheol Seong; Choi, Jung-Hae |
2020-06 | Modulated filamentary conduction of Ag/TiO2 core-shell nanowires to impart extremely sustained resistance switching behavior in a flexible composite | Kim, Youngjin; Jeon, Woojin; Kim, Minsung; Park, Jong Hyuk; Hwang, Cheol Seong; Lee, Sang-Soo |
2018-12-28 | MoO2 as a thermally stable oxide electrode for dynamic random-access memory capacitors | Lee, Woongkyu; Cho, Cheol Jin; Lee, Woo Chul; Hwang, Cheol Seong; Chang, Robert P. H.; Kim, Seong Keun |
2011-06-24 | Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook | Kim, Kyung Min; Jeong, Doo Seok; Hwang, Cheol Seong |
2019-08-07 | Optical control of the layer degree of freedom through Wannier-Stark states in polar 3R MoS2 | Park, Jaehong; Yeu, In Won; Han, Gyuseung; Jang, Chaun; Kwak, Joon Young; Hwang, Cheol Seong; Choi, Jung-Hae |
2019-04-10 | Orientation-dependent structural and electronic properties of Ge/a-GeO2 interfaces: first-principles study | Liu, Kai; Ko, Eunjung; Kim, Sangtae; Park, Jaehong; Hwang, Cheol Seong; Choi, Jung-Hae |
2014-07 | Performance Enhancement of Freestanding Micro-SOFCs with Ceramic Electrodes by the Insertion of a YSZ-Ag Inter layer | Choi, Sun Hee; Hwang, Cheol Seong; Lee, Min Hwan |
- | Performance Enhancement of Freestanding Micro-SOFCs with Ceramic Electrodes by the Insertion of a YSZ-Ag Interlayer | Choi, Sun-Hee; Hwang, Cheol Seong; Lee, Min Hwan |
2012-12 | Performance Variation According to Device Structure and the Source/Drain Metal Electrode of a-IGZO TFTs | Rha, Sang Ho; Jung, Jisim; Jung, Yoonsoo; Chung, Yoon Jang; Kim, Un Ki; Hwang, Eun Suk; Park, Byoung Keon; Park, Tae Joo; Choi, Jung-Hae; Hwang, Cheol Seong |
2012-01 | Properties of Atomic Layer Deposited HfO2 Films on Ge Substrates Depending on Process Temperatures | Jung, Hyung-Suk; Kim, Hyo Kyeom; Yu, Il-Hyuk; Lee, Sang Young; Lee, Joohwi; Park, Jinho; Jang, Jae Hyuck; Jeon, Sang-Ho; Chung, Yoon Jang; Cho, Deok-Yong; Lee, Nae-In; Park, Tae Joo; Choi, Jung-Hae; Hwang, Cheol Seong |
2012-09 | Reduction of Charge Trapping in HfO2 Film on Ge Substrates by Atomic Layer Deposition of Various Passivating Interfacial Layers | Jung, Hyung-Suk; Yu, Il-Hyuk; Kim, Hyo Kyeom; Lee, Sang Young; Lee, Joohwi; Choi, Yujin; Chung, Yoon Jang; Lee, Nae-In; Park, Tae Joo; Choi, Jung-Hae; Hwang, Cheol Seong |
2019-07 | Reduction of the Hysteresis Voltage in Atomic-Layer-Deposited p-Type SnO Thin-Film Transistors by Adopting an Al2O3 Interfacial Layer | Jang, Younjin; Yeu, In Won; Kim, Jun Shik; Han, Jeong Hwan; Choi, Jung-Hae; Hwang, Cheol Seong |
2017-08-28 | Regulation of transport properties by polytypism: a computational study on bilayer MoS2 | Banerjee, Swastika; Park, Jaehong; Hwang, Cheol Seong; Choi, Jung-Hae; Lee, Seung-Cheol; Pati, Swapan K. |
2016-05 | Relaxation oscillator-realized artificial electronic neurons, their responses, and noise | Lim, Hyungkwang; Ahn, Hyung-Woo; Kornijcuk, Vladimir; Kim, Guhyun; Seok, Jun Yeong; Kim, Inho; Hwang, Cheol Seong; Jeong, Doo Seok |
2015-05-13 | Reliability of neuronal information conveyed by unreliable neuristor-based leaky integrate-and-fire neurons: a model study | Lim, Hyungkwang; Kornijcuk, Vladimir; Seok, Jun Yeong; Kim, Seong Keun; Kim, Inho; Hwang, Cheol Seong; Jeong, Doo Seok |
2016-02-02 | Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phases | Lee, Woongkyu; Yoo, Sijung; Yoon, Kyung Jean; Yeu, In Won; Chang, Hye Jung; Choi, Jung-Hae; Hoffmann-Eifert, Susanne; Waser, Rainer; Hwang, Cheol Seong |
2014-08-11 | Resistance switching in epitaxial SrCoOx thin films | Tambunan, Octolia T.; Parwanta, Kadek J.; Acharya, Susant K.; Lee, Bo Wha; Jung, Chang Uk; Kim, Yeon Soo; Park, Bae Ho; Jeong, Huiseong; Park, Ji-Yong; Cho, Myung Rae; Park, Yun Daniel; Choi, Woo Seok; Kim, Dong-Wook; Jin, Hyunwoo; Lee, Suyoun; Song, Seul Ji; Kang, Sung-Jin; Kim, Miyoung; Hwang, Cheol Seong |
2023-08 | Roadmap on ferroelectric hafnia- and zirconia-based materials and devices | Silva, Jose P. B.; Alcala, Ruben; Avci, Uygar E.; Barrett, Nick; Begon-Lours, Laura; Borg, Mattias; Byun, Seungyong; Chang, Sou-Chi; Cheong, Sang-Wook; Choe, Duk-Hyun; Coignus, Jean; Deshpande, Veeresh; Dimoulas, Athanasios; Dubourdieu, Catherine; Fina, Ignasi; Funakubo, Hiroshi; Grenouillet, Laurent; Gruverman, Alexei; Heo, Jinseong; Hoffmann, Michael; Hsain, H. Alex; Huang, Fei-Ting; Hwang, Cheol Seong; Iniguez, Jorge; Jones, Jacob L.; Karpov, Ilya V.; Kersch, Alfred; Kwon, Taegyu; Lancaster, Suzanne; Lederer, Maximilian; Lee, Younghwan; Lomenzo, Patrick D.; Martin, Lane W.; Martin, Simon; Migita, Shinji; Mikolajick, Thomas; Noheda, Beatriz; Park, Min Hyuk; Rabe, Karin M.; Salahuddin, Sayeef; Sanchez, Florencio; Seidel, Konrad; Shimizu, Takao; Shiraishi, Takahisa; Slesazeck, Stefan; Toriumi, Akira; Uchida, Hiroshi; Vilquin, Bertrand; Xu, Xianghan; Ye, Kun Hee; Schroeder, Uwe |
2019-08 | Role of the Short-Range Order in Amorphous Oxide on MoS2/a-SiO2 and MoS2/a-HfO2 Interfaces | Park, Jaehong; Yeu, In Won; Han, Gyuseung; Hwang, Cheol Seong; Choi, Jung-Hae |
2013-09-27 | Short-term memory of TiO2-based electrochemical capacitors: empirical analysis with adoption of a sliding threshold | Lim, Hyungkwang; Kim, Inho; Kim, Jin-Sang; Hwang, Cheol Seong; Jeong, Doo Seok |