| 1997-08-01 | Dependence of carbon incorporation on crystallographic orientation of GaAs and AlGaAs grown by metalorganic chemical vapor deposition using CBr4 | Son, CS; Kim, SI; Kim, Y; Park, YK; Kim, EK; Min, SK; Choi, IH |
| 1997-10 | Dependence of electrical properties on the crystallographic orientation of CBr4-doped GaAs epilayers grown on GaAs substrates by atmospheric pressure metalorganic chemical vapor deposition | Son, SC; Kim, SI; Kim, Y; Kim, EK; Min, SK; Choi, IH |
| 2004-12 | Deposition-temperature dependence of ZnO/Si grown by pulsed laser deposition | Son, CS; Kim, SM; Kim, YH; Kim, SI; Kim, YT; Yoon, KH; Choi, IH; Lopez, HC |
| 1999-02-01 | Direct electronic transport through an ensemble of InAs self-assembled quantum dots | Jung, SK; Hwang, SW; Choi, BH; Kim, SI; Park, JH; Kim, Y; Kim, EK; Min, SK |
| 1998-12 | Direct transport measurements through an ensemble of INAS self-assembled quantum dots | Jung, SK; Choi, BH; Kim, SI; Hyon, CK; Min, BD; Hwang, SW; Park, JH; Kim, Y; Kim, EK; Min, SK |
| 2003-10 | Dynamic softening behavior of Al-18Si alloy produced by spray forming | Kim, SI; Ko, BC; Lee, HI; Yoo, YC |
| 1998-03-01 | Effect of atomic bond structure on crystallographic orientation dependence of carbon doping in GaAs | Park, YK; Son, CS; Kim, SI; Kim, Y; Kim, EK; Min, SK; Choi, IH |
| 2004-12 | Effect of oxygen partial pressure on the surface morphology of sputtered YBCO thin films | Kim, YH; Kim, SI |
| 1996-08 | Effective carrier confinement of a short-period GaAs/AlGaAs quantum wire array | Kim, TG; Park, JH; Kim, Y; Kim, SI; Son, CS; Kim, MS; Kim, EK; Min, SK |
| 2002-06-01 | Effects of coercive voltage and charge injection on memory windows of metal-ferroelectric-semiconductor and metal-ferroelectric-insulator-semiconductor gate structures | Lee, SK; Kim, YT; Kim, SI; Lee, CE |
| 2003-11 | Effects of hydrogen annealing on the electrical properties of SrBi2Nb2O9 thin films | Kim, IS; Kim, YT; Kim, SI; Choi, IH |
| 2001-07 | Effects of rapid thermal annealing on the electrical properties of cobalt contact to p-GaN | Kim, JW; Kim, SI; Kim, YT; Kim, S; Sung, MY; Choi, IH |
| 1996-05 | Effects of rapid thermal annealing on the electrical properties of heavily carbon-doped InGaAs | Son, CS; Kim, SI; Kim, TG; Kim, Y; Kim, MS; Min, SK |
| 2001-04 | Electrical characteristics of Pt/SrBi2Ta2O9/Ta2O5/Si using Ta2O5 as the buffer layer | Choi, HS; Kim, YT; Kim, SI; Choi, IH |
| 2001-12 | Electrical properties of cobalt contact to p-GaN | Kim, JW; Won, JH; Park, SY; Kim, SI; Choi, IH |
| 1998-12 | Electrical properties of electron-beam exposed silicon dioxides and their application to nano-devices | Choi, BH; Jung, SK; Kim, SI; Hwang, SW; Park, JH; Kim, Y; Kim, EK; Min, SK |
| 1996-12 | Electrical properties of heavily carbon-doped GaAs epilayers grown by atmospheric pressure metalorganic chemical vapor deposition using CBr4 | Son, CS; Kim, SI; Min, BD; Kim, Y; Kim, EK; Min, SK; Choi, IH |
| 2001-12 | Electrical properties of Pt/SrBi2Ta2O9/Ta2O5/Si ferroelectric gate structure | Choi, HS; Park, KS; Hur, JS; Choi, IH; Kim, YT; Kim, SI |
| 1997-04 | Electrical properties of rapid thermal annealed carbon-doped InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition | Son, CS; Kim, SI; Kim, TG; Kim, Y; Cho, SH; Park, YK; Kim, EK; Min, SK; Choi, IH |
| 2004-11 | Enhancement of electrical properties of Pt/SrBi2Nb2O9/Pt structures by remote oxygen plasma annealing | Kim, IS; Kim, YM; Choi, IH; Kim, SI; Kim, YH; Yoo, DC; Lee, JY; Son, CS |
| 1995-12 | Enhancement of side wall growth rate during MOVPE growth on patterned substrates with CCl4 | Kim, MS; Kim, Y; Kim, SI; Hwang, SM; Kang, JM; Park, YK; Min, SK |
| 2003-09 | Epitaxial growth and properties of Bi-substituted yttrium-iron-garnet films grown on (111) gadolinium-gallium-garnet substrates by using rf magnetron sputtering | Kim, YH; Kim, JS; Kim, SI; Levy, M |
| 2004-12 | Etch stop characteristics of SrBi2Ta2O9 thin film by using CeO2 buffer layer | Kwon, YS; Il Shim, S; Kim, SI; Kim, YH; Choi, IH |
| 1999-06 | Etching effect of carbon tetrabromide in the vertical growth of GaAs during metalorganic chemical vapor deposition | Park, YK; Kim, SI; Son, CS |
| 1999 | Fabrication and characterization of triangular shaped InGaAs/GaAs quantum wire structures using selective area epitaxy | Kim, SI; Park, YK; Kim, YT; Tan, HH; Jagadish, C |
| 2004-08 | Fabrication of MFISFETs with Pt/SrBi2Ta2O9/Y2O3/Si gate structure by developing an etch-stop process | Shim, SI; Kwon, YS; Kim, SI; Kim, YT; Park, JH |
| 2005-09 | Fabrication of Pt/Sr2Bi2Ta2O9/Y2O3/Si FET and sub-circuit model for full memory chip design | Shim, SI; Kim, IS; Park, MC; Kim, YT; Kim, SI; Lee, CW |
| 1999-09 | Facet evolution of Al0.5Ga0.5As/GaAs multilayers grown on mesa-patterned GaAs substrate | Kim, HJ; Park, YK; Kim, SI; Kim, EK; Kim, TW |
| 2003-06 | Growth and characterization of triangular InGaAs/GaAs quantum wire structures grown by low-pressure metalorganic chemical vapor deposition | Kim, SI; Son, CS; Kim, YH; Kim, YT |
| 2003-03-15 | Growth of triangular shaped InGaAs/GaAs quantum wire structures | Kim, SI; Han, IK; Chung, SW; Jagadish, C |
