| 2003-06 | Growth and characterization of triangular InGaAs/GaAs quantum wire structures grown by low-pressure metalorganic chemical vapor deposition | Kim, SI; Son, CS; Kim, YH; Kim, YT |
| 2003-03-15 | Growth of triangular shaped InGaAs/GaAs quantum wire structures | Kim, SI; Han, IK; Chung, SW; Jagadish, C |
| 1998-02-02 | High photoresponsivity of a p-channel InGaP/GaAs/InGaAs double heterojunction pseudomorphic modulation-doped field effect transistor | Kim, HJ; Kim, DM; Woo, DH; Kim, SI; Kim, SH; Lee, JI; Kang, KN; Cho, K |
| 2004-11-01 | Hydrogen-induced atomic deformation in SrBi2Nb2O9 perovskite structure | Kim, IS; Choi, IH; Kim, YT; Kim, SI; Yoo, DC; Lee, JY |
| 2003-11-01 | Improvement of electrical properties of ferroelectric gate oxide structure by using Al2O3 thin films as buffer insulator | Choi, HS; Lim, GS; Lee, JH; Kim, YT; Kim, SI; Yoo, DC; Lee, JY; Choi, IH |
| 2004-01 | Improvement of ferroelectric properties of Pt-SrBi2Nb2O9-SiO2-Si gate structure through oxygen plasma rapid thermal annealing | Kim, IS; Kim, SI; Kim, YT |
| 2001-03 | Improvement of the reliability of a Cu/W-N/SiOF multilevel interconnect by inserting plasma enhanced chemical vapor deposited W-N thin film | Kim, DJ; Sim, HS; Lee, S; Kim, YT; Kim, SI; Park, JW |
| 1997-06 | InGaAs layer effect on the growth of AlGaAs/GaAs quantum wires on V-grooved GaAs substrates | Kim, EK; Lee, MS; Kim, SI; Park, YJ; Min, SK; Lee, JY |
| 1997-03 | InGaAs layer effect on the growth of AlGaAs/GaAs quantum wires on V-grooved InGaAs/GaAs substrates | Lee, MS; Kim, EK; Kim, SI; Hwang, SM; Kim, CK; Min, SK; Lee, JY |
| 1999-06 | Ionization energies of germanium-doped AlxGa1-xAs epilayers grown on GaAs substrates | Kim, HJ; Park, YK; Kim, SI; Kim, YT; Kim, EK; Moon, S; Kim, TW |
| 1997-05 | Laser-induced direct etching of GaAs using chlorofluorocarbon (CFC) alternative gases | Kim, MS; Lee, C; Park, SK; Choi, WC; Kim, EK; Kim, SI; Ahn, BS; Min, SK |
| 1997-01 | Lateral growth rate control of GaAs on patterned substrates by CCl4 and CBr4 during MOCVD | Kim, SI; Kim, MS; Kim, Y; Hwang, SM; Min, BD; Son, CS; Kim, EK; Min, SK |
| 2004-12 | Lattice structural analysis of hydrogen induced defects in SrBi2Nb2O9 thin films | Kim, IS; Kim, YT; Kim, SI; Yoo, DC; Lee, JY |
| 1998-04 | Maskless selective epitaxial growth on patterned GaAs substrates by metalorganic chemical vapor deposition | Son, CS; Park, YK; Kim, SI; Kim, Y; Kim, EK; Min, SK; Choi, IH |
| 2005-03 | Memory operation of Pt-SrBi2Ta2O9-Y2O3-Si field-effect transistor with damage-free selective dry etching process | Shim, SI; Kwon, YS; Kim, SI; Kim, YT; Park, JH |
| 2003-08 | Metal oxide semiconductor field effect transistor characteristics with iridium gate electrode on atomic layer deposited ZrO2 high-k dielectrics | Youm, M; Sim, HS; Jeon, H; Kim, SI; Kim, YT |
| 2003-07 | Method to enhance atomic-layer deposition of tungsten-nitride diffusion barrier for Cu interconnect | Sim, HS; Kim, SI; Kim, YT |
| 1995-01 | Microwave characteristics of GaAs MESFET with optical illumination | Kim, HJ; Kim, SJ; Kim, DM; Chung, H; Woo, DH; Kim, SI; Choi, WJ; Han, IK; Kim, SH; Lee, JL; Kang, KN; Cho, K |
| 2004-08 | Multiple bit operation of MFISFET with Pt/SrBi2Ta2O9/Y2O3/Si gate structure | Il Shim, S; Kwon, YS; Kim, IS; Kim, SI; Kim, YT; Park, JH |
| 1998-01 | One-step selective growth of GaAs on V-groove patterned GaAs substrates using CBr4 and CCl4 | Kim, EK; Kim, TG; Son, CS; Kim, SI; Park, YK; Kim, Y; Min, SK; Choi, IH |
| 2004-10 | Optical properties of ZnO nanocrystals synthesized by using sol-gel method | Chang, HJ; Lu, CZ; Wang, YS; Son, CS; Kim, SI; Kim, YH; Choi, IH |
| 2002-06-24 | Orientation and partitioning behavior of dilute rodlike polyelectrolyte suspensions within confined slit microchannels | Chun, MS; Kim, SI; Park, OO |
| 2004-05 | Oxygen plasma rapid thermal annealing to improve the electrical properties of Pt-SrBi2Nb2O9-SiO2_Si gate structure | Kim, IS; Kim, SI; Kim, YT |
| 1996-08 | Properties of carbon-doped InGaAs grown by atmospheric pressure metalorganic chemical vapor deposition using CCl4 | Son, CS; Kim, SI; Kim, Y; Lee, MS; Kim, MS; Min, SK; Choi, IH |
| 2004-12 | Red emission from Eu-implanted GaN | Son, CS; Kim, SI; Kim, YH; Kim, YT; Choi, IH; Wakahara, A; Tanoue, H; Ogura, M |
| 1998-05 | Selective epitaxy of carbon-tetrachloride-doped GaAs grown by metalorganic chemical vapor deposition | Park, YK; Kim, SI; Kim, Y; Kim, EK; Min, SK; Son, CS; Choi, IH |
| 1996-03 | Strain and critical layer thickness analysis of carbon-doped GaAs | Kim, SI; Kim, MS; Min, SK |
| 1997-11-21 | Temperature-dependent Hall analysis of carbon-doped GaAs | Kim, SI; Son, CS; Chung, SW; Park, YK; Kim, EK; Min, SK |
| 2000-09 | Thermal stability of tungsten-boron-nitride thin film as diffusion barrier | Park, YK; Kim, SI; Kim, YT; Lee, CW |
