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Showing results 52 to 68 of 68

Issue Date	Title	Author(s)
2008-01	Si-SiGe LED	Kim Hyung-jun; Kang Wang; Song Tong
-	Spatial dependence of magnitude of the spin signal on the InAs quantum well structure	Lee, Tae-young; 김경호; Chang, Joonyeon; Kim Hyung-jun; Koo, Hyun Cheol; Han, Suk Hee
-	Spin Hall Effect Induced by Pd/CoFe Multilayer in a semiconductor channel	마진석; Koo, Hyun Cheol; Eom Jonghwa; Chang, Joonyeon; Kim Hyung-jun; Han, Suk Hee; 김철우
-	Spin injection in an epitaxially grown Fe/GaAs hybrid structure	Lee Tae-hwan; Koo, Hyun Cheol; 김경호; Kim Hyung-jun; Han, Suk Hee; 임상호
-	Spin Interaction Effect on Potentiometric Measurements in a Quantum Well Channel	Park Youn-Ho; Koo, Hyun Cheol; 김경호; Kim Hyung-jun; Han, Suk Hee
-	Spin transport in transferred In0.53Ga0.47As channels onto Si substrates	YunSuk Yang; 고현협; Koo, Hyun Cheol; Chang, Joonyeon; Kim Hyung-jun
-	Spin-orbit interaction parameters in double-sided doped In0.53Ga0.47As quantum well structures	Kim Kyung-Ho; Kim Hyung-jun; Koo, Hyun Cheol; Chang, Joonyeon; 김영근
-	Structural and Transport Properties of fully epitaxial grown Fe/MgO/InAs for Electrical Spin Injections	Kim Kyung Ho; Kim Hyung-jun; shin il jae; Koo, Hyun Cheol; Han, Suk Hee
-	Structure and magnetic properties of epitaxial Fe/MgO/Si(001) heterostructures	Jo Jeong Hong; Kim Kyung-Ho; Nam Yoon Jae; Kim Hyung-jun; Chang, Joonyeon; Lim Sang Ho
-	Structure and magnetic properties of eptiaxial Fe/MgO/Si(001) heterostructures	Jo Jeong Hong; Kim Kyung-Ho; Nam Yoon Jae; Kim Hyung-jun; Chang, Joonyeon; Lim Sang Ho
-	TEMPERATURE DEPENDENCE OF SPIN-ORBIT INTERACTION PARAMETER IN A QUANTUM WELL LAYER	Koo, Hyun Cheol; Park Youn-Ho; 김경호; Kim Hyung-jun; Chang, Joonyeon; Han, Suk Hee
-	Thin body n- and p-GaAs FET on Si for CMOS integration	Shim Jae Phil; Ju, Gunwu; kim seong kwang; KIM HANSUNG; Sanghyeon Kim; Kim Hyung-jun
-	Thin body p-GaAs junctionless FET on Si via wafer bonding and epitaxial lift-off technology	Shim Jae-Phil; Ju, Gunwu; KIM HANSUNG; kim seong kwang; LIM HEEJEONG; Sanghyeon Kim; Kim Hyung-jun
-	Ultra-Thin Body Ge(110)-OI on Si fabrication from Ge/AlAs/GaAs Substrate via wafer bonding technology	Shim Jae Phil; KIM HANSUNG; Ju, Gunwu; Hyeong rak Lim; Kim Seong Kwang; Jae-Hoon Han; Sanghyeon Kim; Kim Hyung-jun
-	Wafer Bonging Process for III-V MOSFET and Monolithic 3D Integration on Si Substrates	Kim Hyung-jun; Sanghyeon Kim
-	(Undefined)	Shin Jaekyun; Ahn, Jae Pyoung; Chang, Joonyeon; Kim Hyung-jun
-	(Undefined)	Kim Hyeon Seung; Kim Hyung-jun; Jun Woo Choi; 김경호; Han, Suk Hee

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