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Showing results 8 to 9 of 9

Issue DateTitleAuthor(s)
-Phase Change Material for Potential Use in High density Non-volatile MemoryCHEONG, BYUNG KI; Kim Inho; Jeung-hyun Jeong; Wu Zhe; LEE, TAEK SUNG; KIM, WON MOK; Dae-Hwan Kang; Hee-Suk Chung; Kim Seul-Cham; Kyu Hwan Oh
-The Effect of Ge Addition on the Operation Characteristics of a Phase-change Memory(PCM) Device Using Ge-doped SbTePark Young-wook; Lee Hyun Seok; Hyung-Woo Ahn; Wu Zhe; Lee Suyoun; Jeung-hyun Jeong; Jeong, Doo Seok; Kyung-woo Yi; CHEONG, BYUNG KI
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