| 1996-12 | CdZnTe를 이용한 HgCdTe 표면의 passivation에 관한 연구 | 이태석; 최경구; 정용택; 김흥국; 김재묵; 김영훈; 송종형; 장진만; 송원선; 김선웅; 박만장; 서상희; 이상돈 |
| 1990-01 | Effect of Hg-annealing at different temperatures on the electrical properties of LPE grown Hg0.8Cd0.2Te. | 서상희; 최종술; 정용택; 김재묵; 문성욱 |
| 1991-01 | Effect of misorientation of(111) CdTe substrate on the surface morphology of Hg0.7Cd0.3Te grown by an LPE process. | 서상희; 곽노정; 임성욱; 김재묵; 최인훈 |
| 1988-01 | Effect of the growth rate on the dislocation density and distribution of CdTe single crystals grown by a vertical bridgman method. | 서상희; 송원준; 임성욱; 최인훈; 김재묵 |
| 1990-01 | Evolution of surface morphology during LPE growth of Hg0.7Cd0.3Te. | 서상희; 임성욱; 김재묵; 송원준; 문성욱; 최인훈 |
| 1998-12 | In-situ Doped Multilayer MOVPE HgCdTe Growth and Photodiode Fabrication | 송종형; 정관욱; 김진상; 서상희; 김인재; 김선웅; 박만장; 박승만; 김홍국; 김재묵 |
| 1990-01 | LPE growth of Hg0.80Cd0.20Te. | 서상희; 최종술; 우병일; 김재묵; 문성욱 |
| 1992-01 | Material characteristics of CdTe and Cd0.96Zn0.04Te single crystals grown by modified bridgman technique. | 서상희; 김진상; 김재묵 |
| 1998-12 | n situ Growth of p-HgCdTe/N-HgCdTe/CdTe/GaAs Epilayer and Fabrication of Two Color Infrared Detector | 박승만; 김흥국; 김재묵; 송종형; 서상희 |
| 1994-01 | Surface morphology and growth rate of Hgl-xCdxTe grown by MOVPE on (100)GaAs. | 서상희; 임성욱; 송종형; 박만장; 김홍국; 김재묵 |
| 1992-01 | The effect of dislocation density of CdTe(CdZnTe) substrated on the dislocation density and distribution of LPE grown Hg0.7Cd0.3Te. | 서상희; 임성욱; 김재묵; 송원준; 최인훈 |
| 1992-01 | The effect of lattice mismatch on the dislocation density and distribution in LPE-grown HgCdTe/CdTe(CdZnTe) hetero-junction. | 서상희; 임성욱; 곽노정; 최인훈; 김재묵; 문성욱 |
| 1992-01 | X-TEM study of the distribution and origion of misfit dislocations in LPE-grwon HgCdTe/CdTe(CdZnTe). | 서상희; 임성욱; 김재묵; 곽노정; 최인훈; 김진상; 금동화 |
