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Showing results 7 to 36 of 84

Issue DateTitleAuthor(s)
2004-02-27Cd/Hg 분위기에서 열처리에 의한 HgCdTe 접합다이오드의 패시배이션 방법김진상; 서상희
1998-12CdZnTe Passivation of HgCdTe by Using Electron Beam Evaporation and Its Interfacial Properties김진상; 정관욱; 서상희; 송종형
1996-12CdZnTe를 이용한 HgCdTe 표면의 passivation에 관한 연구이태석; 최경구; 정용택; 김흥국; 김재묵; 김영훈; 송종형; 장진만; 송원선; 김선웅; 박만장; 서상희; 이상돈
2001-09Characteristics of MOVPE grown HgCdTe on GaAs and CdZnTe substrates김진상; 서상희
2001-06Characteristics of photovoltaic HgCdTe devices for short wavelength infrared detectors김진상; 안세영; 전용우; 서상희
1988-01Cooling rate dependence of the morphology of Hg0.80Cd0.20Te liquid phase epitaxial layer.서상희; D. A. Stevenson
1994-01Double crystal X-ray diffraction studies of ZnSe on (100) GaAs grown by MBE.서상희; 김진상; 정수진; 임성욱
1990-01Effect of Hg-annealing at different temperatures on the electrical properties of LPE grown Hg0.8Cd0.2Te.서상희; 최종술; 정용택; 김재묵; 문성욱
1991-01Effect of misorientation of(111) CdTe substrate on the surface morphology of Hg0.7Cd0.3Te grown by an LPE process.서상희; 곽노정; 임성욱; 김재묵; 최인훈
1992-01Effect of the DeTe/DmCd mole ratio on the surface morphology of MOVPE grown CdTe/GaAs epi layer.서상희; 송원준; 최인훈
1988-01Effect of the growth rate on the dislocation density and distribution of CdTe single crystals grown by a vertical bridgman method.서상희; 송원준; 임성욱; 최인훈; 김재묵
1986-01Effect of the melting rate on the carbide cell size in an electroslag remelted high speed steel ingot.서상희; 최주
1986-01Effect of the melting rate on the solidification rate in the ESR process.최주; 서상희; Renpei Yoda
1979-01Effects of Remelting of Tool Steels by the Electroslag Remelting Process서상희; 최주; 최형섭
2001-08Electrical properties of MOVPE grwon HgCdTe on KOH pretreated GaAs substrates김진상; 서대원; 서상희; 안세영
1976-01ESR 에서 용해속도가 잉고트 미세조직에 미치는 영향 .서상희; 최주; 최형섭
1990-01Evolution of surface morphology during LPE growth of Hg0.7Cd0.3Te.서상희; 임성욱; 김재묵; 송원준; 문성욱; 최인훈
2001-09Flip chip bonder for automatic parallel aligning of IR sensor and read out integrated circuits서상희; 김진상; 안세영
1995-09Growth of HgCdTe epi-layers using MOVPE and surface morphology improvement.서상희; 문성욱; 송종형; 박만장; 김봉진; 김긍호
1998-01Hg-annealing behavior of x=0.3 HgCdTe epitaxial layers서상희; 김진상; 송종형; 김제원
1996-12Hg-확산에 의한 HgCdTe PV diode 제작 및 특성송종형; 박만장; 서상희
2009-04Hg1-xCdxTe를 이용한 64×1 선형 적외선 감지 소자 제작김진상; 서상희
2006-01-09HgCdTe 적외선 감지 소자의 표면 보호막의 제조 방법김진상; 서상희; 정용철; 정연식; 안세영; 김영환
2005-10-24HgCdTe광다이오드 제조방법김진상; 안세영; 김영환; 서상희
2004-02High Performance of SWIR HgCdTe Photovoltaic Detector Passivated by ZnSNgoc-Tu Lanh; 안세영; 서상희; 김진상
1996-01Hillock이 없고 전기적 특성이 좋은 (100) HgCdTe/GaAs의 MOVPE 성장서상희; 문성욱; 송종형
1993-01Improvement of electrical properties of LPE-Hg0.8Cd0.2Te using Cd0.94Zn0.06Te buffer layer.서상희; 곽노정; 최인훈
2003-11Improvement of HgCdTe qualities grown by MOVPE using MBE grown CdTe/Si as substrate김진상; 서상희; S. Sivananthan
1998-12In-situ Doped Multilayer MOVPE HgCdTe Growth and Photodiode Fabrication송종형; 정관욱; 김진상; 서상희; 김인재; 김선웅; 박만장; 박승만; 김홍국; 김재묵
1990-01LPE growth of Hg0.80Cd0.20Te.서상희; 최종술; 우병일; 김재묵; 문성욱

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