| - | Comparison of GaN on sapphire with and without nitridation | Byun Dongjin; 정재식; Kum Dong Wha; Kim Gyeung Ho; 이재인; KIM BYUNG HO; 유지범 |
| - | Effect of sapphire nitridation on GaN by MOCVD | Byun Dongjin; 정재식; Kum Dong Wha; Kim Gyeung Ho; 이재인; Park Dal keun; KIM BYUNG HO; 유지범 |
| 1997-11 | Effect of substrate surface roughness modified by nitridation on GaN growth | 정재식; 변동진; 김병호; 이재인; 유지범; 금동화 |
| 1997-09 | Growth of a thick GaN film on ZnO/sapphire using hydride vapor phase epitaxy | 이정욱; 유지범; 양형국; 박종철; 변동진; 금동화 |
| - | Growth of thick GaN with GaN buffer layer on the various substrates using HVPE | 이정욱; 백호선; 유지범; Kim Gyeung Ho; Kum Dong Wha |
| - | Study of thick GaN film on sapphire using HVPE system | 이정욱; 유지범; Byun Dongjin; Kum Dong Wha |
| 1997-06 | Study on the growth characteristics of thick GaN on sapphire substrate using hydride vapor phase epitaxy | 이정욱; 유지범; 변동진; 금동화 |
| - | The effect of low temperature GaN-buffer layer on the growth of thick GaN using HVPE | 이정욱; 백호선; 유지범; Kim Gyeung Ho; Kum Dong Wha |
| - | The effect of two step GaN growth on the properties of thick GaN by hydride vapor phase epitaxy | 이정욱; 백호선; 이재인; 유지범; Kum Dong Wha |
| - | (Undefined) | 이정욱; 유지범; Kum Dong Wha; Byun Dongjin |
