| 1991-01 | A study on the LPE growth of InP/GaInAsP and its lasing wavelength. | 서상희; 이경구; 전준범, et al |
| 2003-02 | Annealing of InGaAlAs digital alloy studied with scanning-tunneling microscopy and filled-states topography | P. Offermans; P. M. Koenraad; J. H. Wolter, et al |
| 2003-07 | CW 0.5-W 1.52-㎛ digital alloy AlGaInAs-InP multiple-quantum-well lasers | 허두창; 송진동; 한일기, et al |
| 2004-01 | Dependence of the optical properties on the GaAs spacer thickness for vertically stacked InAs/GaAs quantum dots | 이창윤; 송진동; 김종민, et al |
| 2013-01 | Design and Fabrication of 1.35-μm Laser Diodes With Full Digital-Alloy InGaAlAs MQW | 허두창; 송진동; 한일기, et al |
| 2003-12 | Digital Alloy InGaAs/InAlAs Laser Structures Studied by Cross-Sectional Scanning Tunneling Micropscopy | P. Offermans; P. M. Koenraad; J. H. Wolter, et al |
| 2005-03 | Disordering of InGaAs/GaAs multi-quantum well structure by impurity-free vacancy diffusion for advanced optoelectronic devices and their integration | 유재수; 김종민; 이용탁, et al |
| 2009-10 | Effect of Growth Interruption in Migration Enhanced Epitaxy on InAs/GaAs Quantum Dots | 유성필; 조남기; 임주영, et al |
| 2009-10 | Effect of Modified Growth Method on the Structural and Optical Properties of InAs/GaAs Quantum Dots for Controlling Density | 유성필; 조남기; 임주영, et al |
| 2003-02 | Effects of the thickness of dielectric capping layer and the distance of quantum wells from the sample surface on the intermixing of In0.2Ga0.8As/GaAs multiple quantum well structures by impurity-free vacancy disordering | 유재수; 송진동; 이용탁, et al |
| 2003-06 | Effects of thermal annealing on optical and structural properties of 1.3 ㎛ digital-alloy InGaAlAs MQW | 송진동; Kim Jong Min; 배성주, et al |
| 2003-05 | Effects of thermal annealing on the interband transitions of single and vertically stacked InAs/GaAs self-assembled quantum dots | 이창윤; 송진동; 이용탁, et al |
| 2004-04 | Electrical properties and ultrafast photo-response of InGaAs/InP grown by low-temperature molecular beam epitaxy with a GaAs decomposition source | 김종민; 이용탁; 송진동, et al |
| 2005-02 | Fabrication of multi-wavelength In0.2Ga0.8As/GaAs multiple quantum well laser diodes by area-selective impurity-free vacancy disordering using SiOx capping layers with different stoichiometries | 유재수; 송진동; 이용탁, et al |
| 2003-02 | Fabrication of wavelength-shifted In0.2Ga0.8As/GaAs multiple quantum well laser diodes by impurity-free vacancy disordering at different thermal annealing temperatures. | 유재수; 송진동; 이용탁, et al |
| 2003-04 | Improvement of photoluminescence and electroluminescence characteristics of MBE-grown In0.53Ga0.47As/In0.53(Ga0.6Al0.4)0.47As quantum well laser structure with InGaAlAs digital alloys by thermal annea | 유재수; 송진동; 김종민, et al |
| 2003-12 | Improvment of the high-temperature characteristics of 1.52 ㎛ InGaAs laser with (InAlAs)0.4(InGaAs)0.6 short-period superlattice barriers | 허두창; 송진동; 최원준, et al |
| 2005-08 | Influence of impurity-free vacancy diffusion on the optoelectronic properties of the In0.53Ga0.47As/In0.52Al0.48As multi-quantum wells electroabsorption modulator structure | 유재수; 송진동; 이용탁, et al |
| 2004-01 | Influence of semiconductor cap layer on the impurity-free vacancy disordering of the In0.2Ga0.8As/GaAs multiquantum-well structure by dielectric capping layers | 유재수; 송진동; 김종민, et al |
| 2004-02 | Initiation and evolution of phase separation in GaP/InP short-period superlattices | B. Shin; W. Chen; R. S. Goldman, et al |
| 2004-10 | MBE growth and optical properties of digital-alloy 1.55 ㎛ multi-quantum wells | 송진동; 최원준; 김종민, et al |
| 2006-04 | Optical and structural properties of InGaAs/InP double quantum wells grown by molecular beam epitaxy with polycrystalline GaAs and GaP decomposition sources | 송진동; 최원준; 이정일, et al |
| 2005-10 | Optical properties of digital-alloy In0.49(Ga1-zAlz)0.51P/GaAs and InGaP/In0.49(Ga1-zAlz)0.51P multi-quantum wells grown by molecular-beam epitaxy | 김종민; 박찬영; 이용탁, et al |
| 2009-07 | Optical properties of fully digital-alloyed 1.3 μm MQW and its application to laser diodes | 허두창; 송진동; 한일기, et al |
| 2003-12 | Optical Properties of Quantum-Wires Grown Using Lateral Composition Modulation Induced by (InP)1/(GaP)1 Short-Period Superlattices | 송진동; 김종민; 이용탁 |
| 2004-02 | Parametric Study on optical properties of digital-alloy In(Ga1-zAlz)As/InP grown by molecular-beam epitaxy | 송진동; 허두창; 한일기, et al |
| 2009-10 | Raman scattering studies of (GaP)n/(InP)n (n = 1, 1.7, 2) short-period superlattice structures | H. Rho; J.-R. Lim; 송진동, et al |
| 2011-10 | Raman Studies of InGaAlAs Digital Alloys | 민경인; 노희석; 송진동, et al |
