| 2009-04 | Comprehensive review on Various Gate Insulators for Oxide Thin Film Transistors | 이상렬; 장성필; 이재상 |
| 2007-11 | Controlled Ga-Doped ZnO Nanowires Synthesized by PLD in Furnace | 송용원; 이상규; 장성필, et al |
| 2007-11 | Effect of As diffusion on the electrical property of ZnO grown on GaAs substrate by pused laser deposition | 손창완; 장성필; 이상규, et al |
| 2011-07 | Effects of gate insulators on the performance of a-IGZO TFT fabricated at room-temperature | 전윤수; 장성필; 이상렬 |
| 2008-05 | Efficient suppression of charge trapping in ZnO-based transparent thin film transistors with novel Al2O3/HfO2/Al2O3 structure | 장성필; 송용원; 이상규, et al |
| 2008-06 | Electrical characteristics of ZnO based Thin Film Transistors via Overlapped layer between Drain/Source and Gate Electrodes | 장성필; 이상규; 임재현, et al |
| 2009-11 | Fabrication and characterization of Ga-doped ZnO nanowire gas sensor for the detection of CO | 김경원; 송용원; 장성필, et al |
| 2009-04 | High Performance Oxide Thin Film Transistor with ZrO2 Gate Insulator | 이재상; 장성필; 구상모, et al |
| 2010-03 | High-performance a-IGZO TFT with ZrO2 gate dielectric fabricated at room temperature | 이재상; 장성필; 구상모, et al |
| 2008-06 | Improvement of the hysteresis characteristics in ZnO-based Transparent Thin Film Transistors | 장성필; 이세한; 송용원, et al |
| 2009-06 | Investigation on Various Gate Insulators for Oxide Thin Film Transistors | 장성필; 이재상; 주병권, et al |
| 2007-11 | Optimization of active layer for the fabrication of transparent thin film transistor based on ZnO | 장성필; 이상규; 손창완, et al |
| 2009-12 | Origin of hysteresis of a-IGZO transistor with Al2O3/HfO2/Al2O3 gate insulator | 조경철; 장성필; 정유진, et al |
| 2008-02 | Oxide semiconductor TFT | 장성필; 이상렬 |
| 2008-12 | Oxide-TFT의 연구동향과 미래 | 이상렬; 송용원; 장성필 |
| 2007-11 | Processing optimization of Ga-doped ZnO for transparent electrode application using DOE | 이상규; 장성필; 손창완, et al |
| 2008-10 | Role of Al2O3 buffer layer in ZnO-based trransparent thin film transistors with HfO2 gate-insulator | 장성필; 송용원; 이세한, et al |
| 2010-03 | Role of high-k gate insulators for oxide thin film transistors | 이상렬; 장성필; 이재상 |
| 2010-06 | Scaling down of amorphous indium gallium zinc oxide thin film transistors on the polyethersulfone substrate employing the protection layer of parylene-C for the large-scale integration | 장성필; 동기영; 박정호, et al |
| 2009-06 | Systematic investigation on the effect of contact resistance of the electrode on the performance of a-IGZO thin film transistors | 이재상; 장성필; 구상모, et al |
| 2010-04 | Systematic investigation on the effect of contact resistance on the performance of a-IGZO thin-film transistors with various geometries of electrodes | 이재상; 장성필; 후씨네, et al |
| 2010-09 | The effect of annealing on amorphous indium gallium zinc oxide thin film transistors | 배현석; 권재홍; 장성필, et al |
| 2008-08 | ZnO-Based Thin Film Transistors with Al2O3/HfO2/Al2O3 Structure | 장성필; 이세한; 송용원, et al |
| 2008-05 | ZnO-Based Transparent Thin Film Transistors with Minimized Charge Trapping via Multi-Layered Gate Insulators | 장성필; 이상규; 임재현, et al |
| 2008-08 | 디스플레이 Backplane TFT 응용을 위한 차세대 산화물 반도체 응용기술 | 이상렬; 송용원; 장성필 |
| 2008-09-09 | 박막 트랜지스터 | 이상렬; 장성필 |
| 2009-04 | 산화물 박막 트랜지스터 동작에 대한 접촉 저항의 영향 | 이재상; 장성필; 구상모, et al |
