| 1996-01 | 100 ㎚ electron beam lithography using a modified scanning electron microscope. | 김성일; 민석기; 김은규; 최범호; 황성우; 정석구; 김태근 |
| - | Direct transport measurements through an ensemble of if InAs self-assembled quantum dots | 정석구; 최범호; KIM SEOK IL; 현찬경; MIN BYUNG DON; 황성우; PARK JEONG HO; KIM YOUN; KIM EUN KYU; Min Suk-Ki |
| - | Fabrication and characterization of planar resonant tunneling devices incorporating Inas self-assembled quantum dots | 정석구; 황성우; PARK JEONG HO; KIM YOUN; KIM EUN KYU |
| - | Fabrication and characterization of planar-type resonant tunneling devices incorporating InAs self-assembled quantum dots | KIM EUN KYU; 정석구; 황성우; PARK JEONG HO |
| - | Fabrication of in-plane gated transistor with electron-beam lighography technique | 한철구; 김광무; 정석구; 최범호; KIM EUN KYU; Min Suk-Ki; PARK JEONG HO |
| - | Fabrication of quantum dot transistors incorporating single self-assembled quantum dot | 황성우; 정석구; PARK JEONG HO; KIM YOUN; KIM EUN KYU |
| - | Lateral transport through self-assembled In(Ga)As quantum dots located in the narrow gap (~ 30 nm) between e-beam patterned electrodes | 정석구; MIN BYUNG DON; KIM YOUN; KIM EUN KYU; 현찬경; 황성우; PARK JEONG HO |
| 1998-07 | Localization of quantum dots by using a patterned gallium oxide mask layer | 박용주; 한철구; 장영준; 오치성; 정석구; 고동완; 김광무; 김은규; 민석기 |
| - | Resistless nanometer patterning of SiO₂ with electron beam irradiation | KIM SEOK IL; 정석구; 최범호; 현찬경; KIM EUN KYU; Min Suk-Ki; 황성우 |
| - | Selective formation of In//xGa//1//-//xAs quantum dots by molecular beam epitaxy | Park Young Ju; 한철구; 김광무; 정석구; KIM EUN KYU; Min Suk-Ki |
| - | Stress-driven formation of self-assembled InGaAs islands on sub-micron metal-patterned substrate | KIM YOUN; 정석구; MIN BYUNG DON; KIM EUN KYU; 황성우 |
| - | Stress-driven formation of self-assembled InGaAs islands on sub-micron metal-patterned substrate. | 손맹호; 정석구; MIN BYUNG DON; 현찬경; 최범호; KIM EUN KYU; KIM YOUN; 임종수 |
| 1997-03 | 전자선 리소그라피법에 의한 동일평면게이크 트랜지스터의 제작과 특성 연구 . | 김은규; 민석기; 김광무; 한철구; 정석구; 박종윤; 박종호 |
