| - | Carbon doping properties of InGaAs grown by atmospheric pressure MOVPE using CCl//4. | SON CHANG-SIK; Kim Seong Il; KIM YOUN; LEE MIN-SUK; Min Suk-Ki; KIM MOO SUNG; 최인훈 |
| - | Carbon incorporation into GaAs epilayers grown on high-index GaAs substrates by metalorganic chemical vapor deposition | SON CHANG-SIK; Kim Seong Il; KIM YOUN; PARK YOUNG KYUN; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| 1996-07 | CBr4 가스를 사용하여 (100) 및 2 ˚ off (100) GaAs 기판 위에 성장한 탄소도핑된 GaAs 에피층의 전기적 성질 | 손창식; 김성일; 민병돈; 김은규; 민석기; 최인훈 |
| 1994-01 | CCl4 가스를 이용한 대기압 MOCVD로 성장시킨 InGaAs에서의 탄소도핑 특성 | 김용; 손창식; 김성일; 이민석; 김무성; 최인훈; 민석기 |
| - | Characteristics of SrTa2Bi2O9 thin films grown by MOCVD using a new strontium tantalum ethoxide (Sr[Ta(OEt)6]2) source | Kim Yong Tae; PARK YOUNG KYUN; 신동석; 최훈상; 최인훈 |
| - | Characteristics of the crystal structure and electrical properties of Pt/SrBi2Ta2O9/ZrO2/Si structure | 최훈상; 김은홍; Kim Yong Tae; 최인훈 |
| - | Characterizations of vanadium-tungsten-oxide bolometric thin films for uncooled IR detectors | HAN YONG HEE; Moon, Sung Wook; Shin, Hyun Joon; Kim, Shin Keun; An Mi Suk; 김근태; 최인훈; 오명환 |
| - | Comparison in electrical properties SrBi//2Ta//2O//9/CeO//2/Si and SrBi//2Ta//2O//9/Si structures | 신동석; Kim Yong Tae; Ho Nyung Lee; 이창우; 최인훈 |
| - | Comparison of amorphous and polycrystalline tungsten nitride diffusion barrier for MOCVD-Cu metallization. | Kim Yong Tae; 권철순; 김동준; 이창우; 최인훈 |
| - | Correlation between charge injection and memory window in the ferroelectric gate stack structures | Sung-Kyun Lee; 최인훈; 이철의; Kim Yong Tae; KIM CHUN KEUN |
| - | Crystal structure and electrical properties Pt/SrBi2Nb2O9/ZrO2/Si ferroelectric gate structure | 최훈상; 임건식; 이종한; Kim Yong Tae; Kim Seong Il; 최인훈 |
| - | Crystallographic orientation dependence of carbon incorporation into GaAs epilayers | SON CHANG-SIK; Kim Seong Il; KIM YOUN; PARK YOUNG KYUN; MIN BYUNG DON; 황성민; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | Defects in GaN films on SiC(0001) with GaN buffer layers by MOCVD. | Byun Dongjin; Kum Dong Wha; Kim Gyeung Ho; Park Dal keun; 임동섭; 최인훈 |
| 1997-05 | Dependence of the electrical properties of carbon-doped GaAs and AlGaAs epilayers on the surface crystallographica orientation | 손창식; 박영균; 이승백; 김용; 김은규; 최인훈; 김성일; 민석기 |
| - | Effect of crystallographic orientation on carbon incorporation into GaAs and AlGaAs epilayers grown by metalorganic chemical vapor deposition. | SON CHANG-SIK; Kim Seong Il; Min Suk-Ki; KIM EUN KYU; KIM YOUN; 최인훈 |
| 1991-01 | Effect of misorientation of(111) CdTe substrate on the surface morphology of Hg0.7Cd0.3Te grown by an LPE process. | 서상희; 곽노정; 임성욱; 김재묵; 최인훈 |
| - | Effect of rapid thermal annealing on the memory window of ferroelectric YMnO3 thin films deposited on Si substrates | 김익수; Ho Nyung Lee; Kim Yong Tae; 최인훈 |
| 1992-01 | Effect of the DeTe/DmCd mole ratio on the surface morphology of MOVPE grown CdTe/GaAs epi layer. | 서상희; 송원준; 최인훈 |
| 1988-01 | Effect of the growth rate on the dislocation density and distribution of CdTe single crystals grown by a vertical bridgman method. | 서상희; 송원준; 임성욱; 최인훈; 김재묵 |
| - | Effects of Bi content on electrical properties of Pt/SrBi2Nb2O9/Si ferroelectric gate structure | KANG. DONGHOON; 최훈상; 이관; Kim Yong Tae; 이종한; 이건식; Kim Seong Il; 최인훈 |
| - | Effects of hydrogen annealing on electrical properties of SrBi//2Nb//2O//9 thin films. | 김익수; Kim Yong Tae; Kim Seong Il; 최인훈 |
| - | Effects of morphological changes of Pt/SrBi//2Ta//2O//9 interface on the electrical properties of ferroelectric capacitor | 신동석; Ho Nyung Lee; Kim Yong Tae; 최인훈 |
| - | Effects of rapid thermal annealing on electrical properties of CBr//4-doped GaAs epilayers grown by atmospheric pressure MOCVD. | SON CHANG-SIK; Kim Seong Il; MIN BYUNG DON; Lee Sang Bae; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | Effects of Sr/Bi composition ratio on ferroelectric properties of SrBi//2Bb//2O//9 thin films | Kim Yong Tae; 최훈상; Kim Seong Il; 최인훈 |
| - | Effects of voltage distribution in Pt/SrBi2Ta2O9/Ta2O5/Si structure on memory window of ferroelectric gate | Kim, Yong Tae; 최훈상; 박건상; 최인훈 |
| - | EL-MoM2 effects of Ta2O5 and Al2O3 buffer insulators on electrical characteristics of Pt/SrBi2Ta2O9/Si gate structure | 최훈상; Kim Yong Tae; M. Ischida; 최인훈; 이창우 |
| - | EL-MoM5 effects of Bi/Sr stoichiometric ratio on electrical properties of Pt/SrBi2Nb2O9/Si ferroelectric gate structure | Kim Yong Tae; Kim Seong Il; 최인훈; 최훈상; 이창우 |
| - | Electrical properties of carbon-doped GaAs epilayers by atmospheric pressure MOCVD using CBr//4. | SON CHANG-SIK; Kim Seong Il; KIM EUN KYU; MIN BYUNG DON; Min Suk-Ki; 최인훈 |
| - | Electrical properties of Pt/SrBi2Ta2O9/Ta2O5/Si ferroelectric gate structure | 최훈상; Kim Yong Tae; Kim Seong Il; 최인훈; Hoon Sang Choi; Seong Il Kim; In-Hoon Choi |
| - | Electrical properties of Pt/SrBi2Ta2O9/ZrO2/Si ferroelectric gate structure | 최훈상; Kim Yong Tae; 김은홍; 최인훈 |
