| 2003-04 | Fabrication and characterization of uncooled IR detectors using amorphous YBaCuO thin films | 최종현; 최인훈; 김상문; 김영환 |
| 1998-03 | Formation of SiC layer on single crystal Si using hot-filament reactor | 김홍석; 최인훈; 은광용; 백영준 |
| - | Heavily carbon-doped GaAs epilayers grown by atmospheric pressure MOCVD using CBr//4. | SON CHANG-SIK; Kim Seong Il; MIN BYUNG DON; 황성민; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| 1996-01 | Heavily carbon-doped GaAs epilayers grown on (100) and 2 ˚ off (100) GaAs substrates using carbon tetrabromide. | 손창식; 김성일; 민병돈; 김은규; 민석기; 최인훈 |
| - | Heteroepitaxial growth of β -SiC using plasma activated methane and silane sources | 김홍석; PARK YOUNG JOON; 최인훈; EUN KWANG YONG; Baik Young Joon |
| 2002-10 | High-speed performance of single flux quantum circuits test probe | 김상문; 최종현; 김영환; 강준희; 윤기현; 최인훈 |
| 1993-01 | Improvement of electrical properties of LPE-Hg0.8Cd0.2Te using Cd0.94Zn0.06Te buffer layer. | 서상희; 곽노정; 최인훈 |
| - | Influence of rapid thermal annealing of cobalt coatacts to p-GaN | Jewon Kim; PARK YOUNG KYUN; Kim Seong Il; Kim Yong Tae; 최인훈; Akira Yoshida; 김희준 |
| 1999-05 | InGaN epilayer 의 투과 스펙트럼 비교 및 광특성 분석 | Jewon Kim; PARK YOUNG KYUN; Kim Seong Il; Kim Yong Tae; 최인훈; Lee Seock Heon; 이정희 |
| - | Low temperature crystallization of SBT and YMO ferroelectric films by excimer laser irradiation | H. Hiramatsu; T. ITO; Y. Ohki; 설광수; 최인훈; Kim Yong Tae |
| - | Low temperature crystallization of SBT and YMO ferroelectric films by excimer laser irradiation | H. Hiramatsu; T. ITO; Y. Ohki; 설광수; 최인훈; Kim Yong Tae |
| - | Low temperature crystallization of SrBi2Ta2O9 film by excimer laser irradiation | 설광수; Y. Ohki; H. Hiramatsu; 신동석; 최인훈; Kim Yong Tae |
| - | Maskless selective epitaxial growth on patterned GaAs substrates by atmospheric pressure MOCVD | SON CHANG-SIK; Kim Seong Il; PARK YOUNG KYUN; 황성민; 한철구; KIM YOUN; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| 1999-09 | Measurement of the crystallinity and the optical properties for wafer-fused GaAs epilayers on InP substrates | 황성민; 이주영; 김은규; 강동훈; 최인훈; 김용 |
| 1996-07 | Ohmic 층으로서 HgSe/GaAs의 성장 조건 및 HgSe/p-ZnSe/GaAs 구조의 전기적 특성 | 김제원; 최인훈; 김진상; 서상희 |
| - | One-step selective growth of GaAs on V-groove patterned GaAs substrate using CBr4 and CCl4 | KIM EUN KYU; Kim Seong Il; KIM YOUN; PARK YOUNG KYUN; SON CHANG-SIK; 한철구; 황성민; Min Suk-Ki; 최인훈 |
| - | Optical constants of AlGaN grown by molecular beam epitaxy | Jewon Kim; SON CHANG-SIK; 최인훈; PARK YOUNG KYUN; Kim Yong Tae; O. Ambacher; M. Stutzmann |
| - | Optical properties of AlxGa1-xN grown by plasma induced molecular beam epitaxy | Jewon Kim; SON CHANG-SIK; 최인훈; PARK YOUNG KYUN; Kim Yong Tae |
| 1998-01 | Passivation of HgCdTe by thermal evaporated CdZnTe | 김제원; 송종형; 최인훈; 김진상; 서상희 |
| - | Photothermal deflection spectroscopy on InGaN/GaN heterostructures | Jewon Kim; PARK YOUNG KYUN; Kim Yong Tae; SON CHANG-SIK; 최인훈; O. Ambacher; M. Stutzmann |
| 1999-01 | Relative absorption edges of GaN/InGaN/GaN single quantum wells and InGaN/GaN heterostructures by metalorganic chemical vapor deposition | 김제원; 손창식; 장영근; 최인훈; 박영균; 김용태; O. Ambacher; M. Stutzmann |
| - | Role of restrained vertical growth in realizing one-step maskless selective epitaxy on patterned GaAs substrate | SON CHANG-SIK; PARK YOUNG KYUN; Kim Seong Il; KIM EUN KYU; 최인훈 |
| - | Structural and electrical characteristics of ZrO ₂ as a gate dielectric and buffer layer grown by RF magnetron sputtering | 임근식; 최훈상; 이종한; Kim Yong Tae; Kim Seong Il; 최인훈 |
| - | Surface orientation dependent carbon incorporation in to GaAs epilayers grown by atmospheric pressure MOCVD using CBr//4. | SON CHANG-SIK; MIN BYUNG DON; Kim Seong Il; KIM YOUN; KIM EUN KYU; Min Suk-Ki; 최인훈 |
| - | The changes of the properties of Pt/SrBi2Ta2O9/Pt capacitors and Pt/SrBi2Ta2O9/CeO2/Si structures by post-annealing and their origin | 신동석; 최훈상; Ho Nyung Lee; Kim Yong Tae; PARK YOUNG KYUN; 최인훈 |
| 1992-01 | The effect of dislocation density of CdTe(CdZnTe) substrated on the dislocation density and distribution of LPE grown Hg0.7Cd0.3Te. | 서상희; 임성욱; 김재묵; 송원준; 최인훈 |
| 1990-01 | The effect of growth temperature on the surface morphology and composition of LPE growing Hgl-xCdxTe. | 서상희; 임성욱; 최인훈 |
| 1992-01 | The effect of lattice mismatch on the dislocation density and distribution in LPE-grown HgCdTe/CdTe(CdZnTe) hetero-junction. | 서상희; 임성욱; 곽노정; 최인훈; 김재묵; 문성욱 |
| - | The effects of various bottom electrodes in MFM structure on the ferroelectric properties of SrBi2Nb2O9 thin films using RF magnetron sputtering | 최훈상; 이종한; 임건식; 강민정; 최인훈; Kim Yong Tae; Kim Seong Il |
| - | The growth of high quality GaAs epilayers on stripe patterned InP substrates with a transferred GaAs fused layer | 황성민; Park Young Ju; KIM EUN KYU; 최인훈 |
