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Showing results 11 to 14 of 14

Issue DateTitleAuthor(s)
-Study on physical properties of Cu-CVD for ULSI interconnects.Kim Yong Tae; Y. S. Kim; S. K. Kwak; C. S. Kwon; D. G. Jung; Min Suk-Ki
1995-01The characteristics of nitrogen implanted tungsten film as a new diffusion barrier for metal organic chemical vapor deposited Cu metallization.김용태; 민석기; C. S. Kwon; I. H. Choi
-The properties of nitrogen implanted tungsten diffusion barrier for Cu metallization.Kim Yong Tae; C. S. Kwon; D. J. Kim; J. Y. Lee; I. H. Choi
1995-01The properties of nitrogen implanted tungsten diffusion barrier for Cu metallization.김용태; C. S. Kwon; D. J. Kim; J. Y. Lee; I. H. Choi
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