Browsing by Author 강대환

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Showing results 1 to 24 of 24

Issue DateTitleAuthor(s)
2005-05A nonvolatile memory based on reversible phase changes between fcc and hcp안동호; 강대환; 정병기, et al
2005-11An Experimental Analysis of the Thermo-optic Characteristics of PbTe Thin Films by a Real Time Electrical-Optical Characterization이현석; 이택성; 정증현, et al
2006-05An experimental investigation on the origin of super-resolution effects of Te-based chalcogenide semiconducting thin films이현석; 이택성; 정증현, et al
2006-09An experimental investigation on the switching reliability of a phase change memory device with an oxidized TiN electrode강대환; 김인호; 정증현, et al
2005-11An NSOM measurement of the near-field intensity profile of transmitted light due to a PbTe thin film material for super-resolution optical memory이택성; 이현석; 정증현, et al
2006-10Characterization of the super-resolution effects of PbTe thin films이현석; 이택성; 정증현, et al
2006-03Effects of nitrogen addition on the properties of Ge-doped SbTe phase change memory material정병기; 김인호; 정한주, et al
2006-02Enhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrode강대환; 김인호; 정증현, et al
2006-04Fast and versatile memory behavior of phase change memory with (Ge1Sb2Te4)1-x(Sn1Bi2Te4)x chalcogenide alloy and its kinetic characteristics안동호; 이태연; 전현구, et al
2007-09High speed phase change random access memory with (Ge1Sb2Te4)0.9(Sn1Bi2Te4)0.1 complete solid solution안동호; 이태연; 이동복, et al
2005-04Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phasesB. S. Lee; J. R. Abelson; S. G. Bishop, et al
2006-04Investigation on the enhanced switching reliability of a non-volatile phase-change memory device with an oxidized TiN electrode강대환; 김인호; 정증현, et al
2005-09Kinetic characteristics of FCC to hexagonal transformation in (Ge1Sb2Te4)0.8(Sn1Bi2Te4)0.2 chalcogenide alloy for phase change memory안동호; 김현미; 이민현, et al
2004-08Lower voltage operation of a phase change memory device with a highly resistive TiON layer강대환; 안동호; 권민호, et al
2006-04On the kinetic characteristics of the set process in a Non-volatile Phase-Change memory강대환; 정병기; 정증현, et al
2006-05Phase Change Material for Potential Use in High density Non-volatile Memory정병기; 김인호; 정증현, et al
2005-09'Phase Change' 재료를 이용한 비휘발성 메모리 기술정병기; 강대환; 정증현
2005-02PRAM 기술의 개요 및 개발 동향강대환; 정증현; 정병기
2004-09Reduction of the threshold voltage fluctuation in an electrical phase change memory device with a Ge1Sb2Te4/TiN cell structure강대환; 김태균; 정한주, et al
2007-01Response to 'Comment on 'Investigation of the optical and electronic properties of Ge2Sb2Te5 phase change material in its amorphous, cubic, and hexagonal phases''이봉섭; John R. Abelson; Stephen G. Bishop, et al
2005-12Time-resolved analysis of the set process in an electrical phase-change memory device강대환; 정병기; 정증현, et al
2007-01Toward Understanding the Mechanism of Nonlinear Optical Characteristics of PbTe Thin Film for Nano-Optical Memory이택성; 이현석; 정병기, et al
2012-02Understanding on the current-induced crystallization process and faster set write operation thereof in non-volatile phase change memory강대환; 김난영; 정홍식, et al
2004-11-29투명전도성 산화물 전극 접촉 재료를 갖는 상변화 메모리 셀강대환; 김기범; 김원목, et al

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