Browsing by Author 강문상

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Showing results 1 to 7 of 7

Issue DateTitleAuthor(s)
1997-08A study on the relation between film quality and deposition rate for amorphous silicon films grown by electron cyclotron resonance plasma chemical vapor deposition using H2/SiH4강문상; 김재영; 임태훈, et al
1997-11Characteristics of a-Si:H films prepared by ECR CVD as a function of the H2/SiH4강문상; 김재영; 구용서, et al
1996-01Characteristics of a-Si:H films prepared by ECRPVD강문상; 임태훈; 오인환, et al
1996-01Characteristics of hydrogenated amorphous and recrystallized Si films with the variation of the substrate temperature in ECR plasma CVD.강문상; 임태훈
1997-11The characteristics before and after annealing of amorphous silicon films prepared by ECR plasma CVD강문상; 김재영; 임태훈, et al
1996-01The characteristics of a-Si:H films as a function of H2/SiH4 ratio in EVR CVD강문상; 전법주; 임태훈, et al
1996-01The optical and electrical characteristics of a-Si:H films prepared by ECR CVD전법주; 강문상; 임태훈, et al